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Development of a Low-Power High-Frequency Device Using a Nitride Semiconductor |
| FY2002-FY2006; FY2004 Project Budget: 550 million yen |
| Wireless communications technology is expected to bring about an ultrafast communications network which will support the advanced information society of the future. In this project, an innovative high-frequency device targeting the frequency band between several GHz and several tens of GHz, which is indispensable for key devices in wireless communications, will be developed. The use of a nitride semiconductor, which has excellent physical properties, will allow the device to be efficient and have high-output, low-distortion characteristics throughout the frequency band, which is not possible with existing semiconductors. |
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