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FLOSFIA INC.

FLOSFIA INC. logo

As of February 2024

City Year of Establishment Founder
Kyoto City 2011 Toshimi Hitora
Partner VC Latest round of Fundraising Valuation
- Series E JPY14,500 million

  • Contact Information : 075-963-5202
  • info@flosfia.com
  • Website : a new window will openFLOSFIA INC.

Program name

Deep-Tech Startups Support Program

Research theme

Demonstration of low-cost mass production of high-performance α-Ga2O3 power semiconductors

Business Plan

We will develop high-functionality and low-cost technology for power semiconductor devices using α-Ga2O3 (corundum-structured gallium oxide), a new material that demonstrates excellent performance specifically for power semiconductor applications, and by establishing mass production technology that achieves both high functionality and low cost and implementing it in society, we aim to reduce power conversion loss in a wide range of application fields, including electric vehicles, robots, power supplies, and inverters, and expand the market.

Research Outline

This R&D project will develop high-functionality and low-cost technology for power semiconductor devices using a new material α-Ga2O3, and solve issues through optimization of device structure and process, reliability evaluation, and customer feedback. By achieving the development items listed below, we aim to clear the important levels of "high functionality" and "low cost".

(1)Small chip size device design and development

(2)Low-cost process design and development

(3)Larger wafer diameter

(4)Chip miniaturization

(5)Ensuring reliability

Phase Business Area/Field Research Period Research Grant Amount
DMP Materialsl 2023~2025FY JPY 300 million

Last Updated : April 30, 2024