成果報告書詳細
管理番号20100000001424
タイトル*平成21年度中間年報 次世代パワーエレクトロニクス技術開発(グリーンITプロジェクト)
公開日2010/10/21
報告書年度2009 - 2009
委託先名次世代パワーエレクトロニクス研究開発機構
プロジェクト番号P09004
部署名電子・情報技術開発部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等
(1)事業目的、概要
本技術開発では、材料特性に優れたSiC 半導体の結晶基板(ウエハ)評価から、デバイスモジュール開発、さらにSiC パワーデバイスを用いたデータセンタ用高効率サーバ電源、太陽光発電用高効率パワーコンディショナの機器・システムの実証に至る研究開発を行う。
英文要約Title:Future Power Electronics Technology Development/(FY2009-FY2012)FY2009 Annual Report.
1.Development of Power Supply Technology for Data Center Server with SiC devices: 20-A on-current and 3.3-mΩ cm2 on-resistance are achieved with parallel connection of 600 V/10A Junction FET chips. 1.6-V on-voltage is also achieved in 20-A Schottky diodes. It is found that the potential difference ΔV, caused by gate resistance and current, is dominant in large devices and decreases on-state drain current. Source-electrode contact structure is optimized to prevent false turn-off. 100-A switching, in which the turn-on and turn-off times are 86 and 51 ns, respectively, is demonstrated with seven 600 V/10 A junction FET chips.
2.Development of Inverter Technology with SiC devices for Photovoltaic Applications: We fabricated an experimental SiC-power module to evaluate the switching loss of SiC power devices. The module has a distinctive structure of an extremely low parasitic inductance, which is necessary to evaluate the switching loss of the devices under the fast switching condition without the disturbing effects by the surge voltage. From the experimental results of the static and switching characteristics of the SiC devices, we estimated the efficiency of a SiC inverter rated at 30kW. The estimation results show that the efficiency will be improved up to 98% (target level of the development) at the rated capacity under the 2-level electric circuit inverter system. 3.Development of Future SiC devices / Power Converter Technology: (1)Device: Advantage of the on-resistance for UMOS-type MOSFET was verified and this result was reported in ICSCRM 2010 as the invited poster. This result was filed as a patent application. Total device reliability was also investigated. NH3-POA improved I-V characteristics, however, the Dit and the flat-band shift were large. TEG for electromigration test was made and the measurement system of the avalanche resistance at 200°C was established. (2)The evaluation: Development of computer image processing program to evaluate etch-pits density on wafer surfaces was carried out. Micro structure analysis of triangular defects on surface of epitaxy films by SEM, TEM, statistical analysis of them by Candela were carried out. Technological issues concerning large-size SiC wafer process were investigated and discussed. (3)Power converter: The metal contact of SiC chip has been evaluated, and the new contact technology which can be used under the condition of 330 °C is developed. In addition, as the mechanical and thermal properties of the materials which are used for the power converters are temperature dependent, the characteristics of these properties are surveyed from a viewpoint of realizing the precise simulation. Based on these investigations, the 10kW class power converter whose device temperature is about 200 °C is designed.
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