成果報告書詳細
管理番号20110000000324
タイトル*平成22年度中間年報 新エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/低倍率集光型薄膜フルスペクトル太陽電池の研究開発(フルスペクトルTCO)
公開日2011/7/28
報告書年度2010 - 2010
委託先名旭硝子株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 [平成22年度中間目標](1)概ね0.4μmから1.4μmで光吸収率が5%以内、比抵抗1×10-3Ωcm以下の達成。(2)TCO基板をグループ内の他機関へ供給して太陽電池に適用し、低倍率集光時、真性変換効率20%(有効受光面積:1cm2)を得る事。 [成果](1)新規導入した減圧熱CVD(LP-CVD)にて、開発したTCOの電気的、光学的特性を表1に示す。波長0.4~1.4μmの平均吸収率は4.0%と、目標値である5%以下を達成した。
英文要約Title: NEDO Innovative PV Technology "Thin Film Full Spectrum Solar Cells with Low Concentration Ratios" Full Spectrum TCO (FY2008-2012) FY2010 Annual Report
From the result of FY2008-2009, we found that high mobility and low carrier concentration is needed, in order to decrease free carrier absorption in near-infrared-radiation (NIR). In FY2010, we investigate various deposition conditions (Deposition temperature, gas flow, deposition time, glass substrate, etc) for getting higher mobility. As the result, mobility is maximum(70[cm2/Vs]) where deposition temperature is 415degC. And it is found that keeping the film at the deposition temperature + 25degC (=440degC) for 30minutes, just after deposition finished, is effective for achieving higher mobility (75[cm2/Vs]). We investigated HF dependence, also. In low HF flow region (HF/SnCl4=0~4), mobility and carrier concentration decrease as HF flow decreases. But in middle region (HF/SnCl4=4~16), mobility is almost constant (72[cm2/Vs]) while carrier concentration increases as HF flow increases. So, in order to achieve "higher mobility and lower carrier concentration", HF/SnCl4=4 is the best condition up to now. The optical and electrical properties of the sample, applied these conditions, are described below (Properties of Type-U are described in parentheses). Absorption@1400nm:8.3% (21%), Absorption average over 400~1400nm:4.0% (10.4%), Resistivity [Ohm cm]: 8.0e-4 (6.3e-4), Sheet resistance[Ohm/sq]:8.7 (5.4), Mobility[cm2/Vs]: 74.8 (58.9), Carrier concentration[cm-3]:1.0e20 (1.7e20). Target of FY2010 is "Absorption average 400~1400nm is less than 5%, resistivity is less than 1.0e-3[Ohm cm]". So, the target was achieved. [Future plan] We will try to control permittivity of SnO2 crystal by doping another materials (Zr, etc), for improving NIR transmittance. And we will try to add haze by etching substrate, TCO films, etc.
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