成果報告書詳細
管理番号20110000000336
タイトル*平成22年度中間年報 太陽エネルギー技術研究開発/太陽光発電システム次世代高性能技術の開発/CIS系薄膜太陽電池の高効率化技術の研究開発)
公開日2011/7/28
報告書年度2010 - 2010
委託先名昭和シェル石油株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1. 共同研究の内容及び成果等 昭和シェル石油(株) 昭和シェル石油(株)は、平成24年度中間目標として30cm角程度のサブモジュールで変換効率17%を達成するために、以下の研究開発を実施した。 (1)Voc×Jsc向上のためのp型CIS系光吸収層の高品質化技術開発 昭和シェル石油(株)独自のp型CIS系光吸収層作製技術である「セレン化後の硫化法(SAS法)」により、CIS系光吸収層の高品質化(Voc×Jsc向上)を目的にSASプロセスを検討した。
英文要約Title: Development of high efficient CIS-based thin-film solar cells (FY2010-FY2012) FY2010 Annual Report
Showa Shell Sekiyu K.K. has developed following items to achieve efficiency of 17% on a 30cmx30cm-sized submodule as a milestone. 1) Development of high quality CIS-based absorber to improve “VocxJsc”: We have originally developed CIS-based absorber by a sulfurization after selenization (SAS) method. In order to increase Jsc, we applied thicker absorber by current SAS process. It led to a larger Jsc, but Voc was dropped. So the “VocxJsc” scarcely changed. Moreover it caused a sudden drop in a FF. As a result, the Efficiency was decreased. After that we found that Voc and FF dropping could be restricted by an optimization of a “sulfurization degree” in a crystallization process of the absorber. From electron back scattering diffraction (EBSD) maps and electron beam induced current (EBIC) analysis, we observed an enlargement of a grain size and an extension of a space charge region in the absorbers with the higher sulfurization-degree process. Glow discharge optical emission spectrometry (GD-OES) showed that the higher sulfurization-degree process enhanced a Ga diffusion. These results clearly showed that the Voc and the FF improvement came from the refinement of the absorber quality. 2) Development of high quality pn-hetero-junction: We didn’t develop this item, because we focused on the other items. 3) Improvement of uniformity: We improved the film uniformity of sputtering processes, SAS process and MOCVD process. These improvement of uniformity caused reduction of a Voltage/Current mismatch and a resistance distribution. As a result, the FF was increased. 4) Improvement of circuit design: We studied for a newly installed Mechanical Patterning. 5) Improvement of optical design: We have been developing texture structure of TCO and anti-reflection coating. : To apply above-mentioned items, we achieved 17.2% aperture area efficiency. (Voc=0.693V/cell, Jsc=34.6mA/cm2, FF=0.716, Area=808cm2, STC condition, in-house measurements) This efficiency is new world record for large area thin-film CIS technology.
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