成果報告書詳細
管理番号20110000000426
タイトル*平成22年度中間年報 新エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/低倍率集光型薄膜フルスペクトル太陽電池の研究開発(サブセル界面接合技術)
公開日2011/7/28
報告書年度2010 - 2010
委託先名三菱電機株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 本研究では積層型太陽電池において低倍率集光による大電流発生時のサブセル間接合部の抵抗によるフィルファクター低下を防止した超高効率の薄膜フルスペクトル太陽電池実現を目指した技術開発を行い平成22年度末にサブセル界面抵抗として300mΩ・cm2を得ることを目標としている。 上記目標のためにサブセル界面接合技術の開発を、(ア)サブセル界面トンネル伝導評価技術の開発、(イ)低抵抗サブセル界面トンネル伝導構造の開発の両面から実施している。
英文要約Title: NEDO innovative PV technology, "Thin film full spectrum solar cells with low concentration ratios", Multi-cell interface junction. (FY2008-FY2010)FY2010 Annual Report
The purpose of our research is to develop the novel junction layer for achieving low-resistance tunnel recombination junction between sub-cells in thin film full spectrum solar cells. To achieve this purpose, we are developing a) the characterization technology on the tunneling conduction, b) the fabrication technology for the low resistance tunneling conduction structure, at the sub-cell interface. As a characterization technology we developed an analization scheme of the current-voltage characteristics for test structures to investigate the transfer mechanism of the junction current between the stacked cells. Further, to investigate the mechanism of the tunneling recombination at the interface, we introduced a deep level transient spectroscopy apparatus. By using this, we investigated the plasma damage at Si/NiO interfaces. As a fabrication technology, we proposed the new junction structure which utilizes a charged double layer to cause the band bending for the enhancement in the tunneling at the junction. We realized this structure by using a SiO2 /Al2O3 stack inserted between an n-Si and a p-Si layer. Current-voltage measurements for test device structures suggested that the electric double layer could cause a band bending at the junction. However the tunneling current is difficult to increase in the dielectric film system inserted at the junction. For the further reduction in the junction resistance, we proposed a p/n tunneling junction utilizing conductive oxide films. As the candidates for p-type material, we selected NiO:Li, Cu2O, and ZnIr2O4, and ZnO:Al for n-type material. We obtained the film resistivities of 0.3, 0.2 and 1E-3 Ω*cm , and the optical band gap of 3.6, 2.2, and about 3eV(not clear), for NiO:Li, Cu2O, and ZnIr2O4, respectively. By the optimization of the sputtering deposition conditions and the selection of the p-type conductive oxide, we achieved a low junction resistance smaller than the aimed level of 300mΩ*cm2 by using a ZnO/ZnIr2O4 junction structure.
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