成果報告書詳細
管理番号20110000000430
タイトル*平成22年度中間年報 新エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/低倍率集光型薄膜フルスペクトル太陽電池の研究開発(構造設計とカルコパイライト系トップセル)
公開日2011/7/28
報告書年度2010 - 2010
委託先名立命館大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 高効率薄膜フルスペクトル太陽電池達成に必須な、トップセルとなる高効率ワイドギャップCu(In,A1)S2(CIAS)太陽電池の開発を行った。CIAS薄膜の禁制帯幅としては2eV付近を目指し、主に紫外線領域を吸収するセルの実現を目指した。 今年度は、(1)CuInA1合金の硫化によりCIAS薄膜を作製し、セル化を行った。(2)CIASにも対応できる新バッファであるZnO1-xSxを用いてセル化を行った。(3)第1層セルであるCIASと下部セルを接続するための、引き剥がし法による転写技術を開発した。
英文要約Title:Thin Film Full Spectrum Solar Cells with Low Concentration Ratios(Design of Thin-Film Full Spectrum Solar Cells and Development of Cu(In,Al)S2 Top Cells) (FY2008-FY2010) FY2010 Annual Report
Cu(In,Al)S2 (CIAS) solar cells are developed for the top cell of full spectrum solar cells. In this year, we worked on mainly following 3 subjects: (1) high quality CIAS film fabrication by sulfurization of Cu-In-Al metallic precursors, (2) new buffer layer of Zn(O,S) for widegap CIAS, and (3) lift-off process for connecting top cell to lower cell for full spectrum cells. Details for (1)-(3) are as follows. (1) CIAS films were fabricated by sulfurization of Cu-In-Al metallic precursors which were deposited by co-evaporation method at the substrate temperature of 300 degree C. The sulfurization was performed by lamp heating system at 550 degree C using sulfur grains as sulfur source. The reaction started from the precursor surface, and the reaction speed of CuInS2 is faster than that of CuAlS2, resulting in In-rich composition toward the surface. The solar cell with the structure of ITO/ZnO/CdS/CIAS/Mo/glass based on this CIAS film showed the efficiency of 9.6% (Jsc: 23.8 mA/cm2, Voc: 638 mV, FF: 63.5%). (2) The conventional buffer layer of CdS is not suitable for widegap CIAS solar cell because of conduction band offset (CBO) mismatching. We proposed the use of Zn(O,S) as a new buffer layer for CIAS for CBO matching. The Zn(O,S) films were prepared by co-sputtering of ZnO and ZnS targets. In this study for the proof of the concept, CuInS2 films fabricated by sulfurization of Cu-In metallic precursors were used and the solar cells with ITO/Zn(O,S)/CIS/Mo/glass structure were fabricated. Using Zn(O,S) with S/(O+S) ratio of 0.5, the efficiency of 8.2 % (Jsc: 23.5mA/cm2, Voc: 629 mV, FF: 55.3%) was obtained, demonstrating the usefulness of this new buffer layer. (3) The development of superstrate-type CIAS solar cells is desirable for the top cell of the full-spectrum solar cell. The superstrate-type cell can be realized by lift-off process which consists of the attachment of a glass substrate on the surface of the substrate-type cell and transfer to the cell to the attached glass. In this study for the proof of the concept, the substrate-type cell with ITO/ZnO/CdS/CIS/Mo/glass structure was transfer to an alternative glass substrate and superstrate-type cell was fabricated. The efficiency of 5% was obtained for the both cells, demonstrating the usefulness of the lift-off process.
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