成果報告書詳細
管理番号20110000000441
タイトル*平成22年度中間年報 新エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/低倍率集光型薄膜フルスペクトル太陽電池の研究開発(ナノドット量子効果を有する薄膜の形成技術)
公開日2011/7/28
報告書年度2010 - 2010
委託先名三洋電機株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:(2)ナノドット分散マトリクス薄膜のバンドギャップ制御 本委託研究で開発する低倍率集光型薄膜フルスペクトル太陽電池は、太陽光の持つエネルギーを有効に吸収し、効率よく電気エネルギーに変換するため、太陽光のスペクトルに対応したバンドギャップを有する数種類の太陽電池を積層(もしくは配列)する。このような構造の太陽電池では、積層されたそれぞれの太陽電池が対応するスペクトルの太陽光エネルギーを電気エネルギーに変換するため、バンドギャップの高精度制御ができる高品位半導体膜の形成が求められる。
英文要約Title:
Research and Development on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program)
Thin-Film, Full-Spectrum Solar Cells with Low Concentration Ratios
Novel Silicon Nano Dots (FY2008-FY2012) FY2010 Annual Report
Abstract:
Sanyo has taken an active part in a NEDO project for the research and development on innovative solar cells. The research theme of our group (leader: Prof. Konagai, Tokyo Institute of Technology) is “Thin Film Full Spectrum Solar Cells with Low Concentration Ratios,” and Sanyo has been in charge of the development of thin films with a quantum nano-dot effect for use in solar cells.
Our intermediate targets for FY2010 in this project are as follows:
1.Defect density: < 5 x 10^18 cm-3
2.Range of band gap control: Approx. 0.2 eV
3. Development of high-quality thin films for bottom cells with a quantum nano-dot effect
 To reduce the defect density, we have optimized the fabrication conditions for nano-dot dispersed a-Si thin films and achieved a low defect density of 7x10^17 cm-3, which is lower than the target value by almost one order of magnitude.
For the band gap control, it is well known that the energy gap of nano dots depends on their size. In addition to this size effect, a wavelength shift of photoluminescence (PL) from nano dots has been observed by changing the sintering temperature of the matrix thin film holding the nano dots. The magnitude of this energy shift was about 0.19 eV. Since it was thought that this phenomenon was due to the change of the energy gap of the nano dots in the matrix material, it was concluded that we have successfully achieved the target value of 0.2 eV for band gap control.
A solar cell with a power-generating layer employing nano dots has finally been fabricated and evaluated. The cell clearly showed a power-generating phenomenon. A Voc, one of the device parameters, of 0.488 V was also obtained. This was very high compared with the target of 0.1 V.
 In summary, we have achieved our FY2010 targets of reducing the defect density, substantiating the possibility of band gap control by introducing a nano-dot effect, and fabricating a solar cell that includes nano dots in its power-generating layer and exhibits a Voc higher than 0.1 V.
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