成果報告書詳細
管理番号20110000000443
タイトル*平成22年度中間年報 新エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/低倍率集光型薄膜フルスペクトル太陽電池の研究開発(p型透明導電膜)
公開日2011/7/28
報告書年度2010 - 2010
委託先名龍谷大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等 本研究開発は、2050年までに「変換効率が40%超」かつ「発電コストが汎用電力料金並み(7円/kWh)」の太陽電池を実用化することを目指した「低倍率集光型薄膜フルスペクトル太陽電池の研究開発」の中で、以下の研究開発を実施した。(1) サブテーマ 1-6 ワイド/ナローギャップ材料設計:禁制帯幅の広いワイドギャップ(1.7~2.0eV)材料や禁制帯幅の狭いナロ~バンドギャップ(0.6~1.0eV)材料の材料設計を行う。(2) サブテーマ 3-2 p型透明導電膜:集光型セル用p型TCOへの要求特性を満足する新材料の探索研究を行い、材料の薄膜作製技術開発を行う。但し、サブテーマ 3-2 p型透明導電膜の開発の一部については新潟大学と共同実施した。
英文要約Innovative PV Technology
“Thin Film Full Spectrum Solar Cells with Low Concentration Ratios”
Ryukoku University joint implementation with Niigata University
The research program was begun in FY 2008. In that year, the Ryukoku University group focused on two areas. Following is a summary of our results.
Task #1: Design of wide or narrow band gap absorber materials
We have theoretically evaluated phase stability and electronic structure of Ag2ZnSnSe4. The enthalpies of formation for kesterite, stannite and wurtz-stannite phases of Ag2ZnSnSe4 were calculated by first principles calculation. Among these three phases, the kesterite phase is the most stable. The calculated band gap of the kesterite-type Ag2ZnSnSe4 is larger than that of Cu2ZnSnSe4. Next, we synthesized CuIn(Se1-xTex)2 (CIST) solid solution. The band gaps of the CIST solid solution decrease with increasing Te content. At x = 0.5, CuIn(Se0.5Te0.5)2 has a minimum band gap of 0.88 eV. The CuIn(Se0.5Te0.5)2 has potential as a narrow band-gap absorber material for thin film full spectrum solar cells.
Task #2: Development of p-type TCO films for thin film full spectrum solar cells
(a) Cu-Nb-O films with a thickness of ca. 150 nm were prepared using CuNbO3 ceramic target by pulsed laser deposition. The X-ray diffraction patterns showed that the Cu-Nb-O films were amorphous or an aggregation of fine crystals. The post-annealed film at 573 K in N2 gas showed 80% transmission in visible light (band gap = 2.6 eV) and high p-type conductivity of 21 Scm-1. The Cu-Nb-O film with a thickness of 100 nm, fabricated from the target with a composition of Cu/Nb=0.9, showed the highest p-type conductivity of 116 Scm-1.
(b) Niigata University is working to develop growth technology for p-type TCO films by the solution and sputtering methods. CuAlO2 films were prepared by the solution method using metal-organic-decomposition sources followed by annealing in N2 gas flow. The films exhibited low p-type conductivity and an absorption edge of about 350 nm. Cu-Nb-O films were also deposited at room temperature by alternatively sputtering Cu and Nb targets under an Ar-diluted oxygen gas atmosphere. The films exhibited high p-type conductivity and an absorption edge of about 400 nm. These properties were similar to those of the Cu-Nb-O films prepared by pulsed laser deposition.
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