成果報告書詳細
管理番号20110000000838
タイトル*平成22年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(次世代超薄型高効率結晶シリコン太陽電池)
公開日2011/7/28
報告書年度2010 - 2010
委託先名京セラ株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:(1)研究開発の方針について
開発項目 (d)高効率・低コストセルの研究開発
2030年に向けた太陽光発電のロードマップを早期に実現するため、発電コストを7円/kWhにまで低減させる必要がある。超薄型高効率セルプロセス開発に関しては、 実用化、事業化を前提とした超薄型の大面積基板を用い、低コスト化が見込めるプロセスで、電極形成技術開発、新規光閉じ込めやパッシベーション技術、pn接合形成、薄型基板セルおよびバックコンタクト構造の技術開発により世界最高水準の変換効率を達成することを目指す。具体的には、下記研究開発を行う。
【1】高効率化技術開発
(平成22~24年度方針)
超薄型結晶シリコン基板を用いる場合に、従来のアルミペーストによるBSF層形成法で問題になっていた反りを抑制し、かつ低コストプロセス実現の為に最適な、新規電極形成技術開発、新規光閉じ込め構造の検討とプロセス技術(ドライ,ウエットおよびレーザーとの組み合わせ等)に関する技術開発を行う。さらに、薄型セルを使用する際に不可欠な裏面再結合低減のため、新規表面再結合低減構造の検討とプロセス開発を行う。
(平成22年度方針)
新規光閉じ込め構造の検討および新規電極形成技術に関する要素技術開発を実施し、低コストプロセス最適化の為の要素把握を行う。また、電極形成技術開発では、電極材料の耐候性試験を行い信頼性の評価も実施する。
英文要約Title: "High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (super thin high efficiency crystal silicon photovoltaic) " (FY2011 to FY2013) FY2011 annual report. Kyocera Corporation.
[Objective in FY 2013] We aim to achieve crystalline silicon photovoltaic cell conversion efficiency 20%, module conversion efficiency 18%. (1)policy of research and development; We have to reduce the photovoltaic power generation cost to 7YEN/kWh to realize the road map of photovoltaic power generation cost for 2030. In the development of super-thin high efficiency photovoltaic process, we aim to achieve the high conversion efficiency of the world's best level by using the super thin wafer and achieving the technical development about electrode formation technology, new light trapping technology, effective passivation technology, p-n junction formation technology and back-contact structure with low cost process. 1. high efficiency technology development: (FY2011-FY2013 policies) We perform the development for the technology to reduce the cell-warp which is the problem with the BSF layer formation method by using the conventional aluminum paste and to achieve the technical development about electrode formation technology, new light trapping technology with low cost process (dry/wet and laser), effective passivation technology, p-n junction formation technology and back-contacted structure. Furthermore, we develop the new structure and process to achieve the low surface recombination velocity with super thin cell. (FY2011 policy) We perform the development for the technology to achieve the technical development about electrode formation technology and new light trapping technology with low cost process (dry/wet and laser). 2. Evaluation of the materials provided from the sub-theme for research and development of the low cost poly silicon raw materials and quasi-mono crystalline silicon wafer: (FY2011 policy) We evaluate the sample wafers provided from the sub-theme for research and development of the low cost poly silicon raw materials and quasi-mono crystalline silicon wafer which research and develop about the low cost poly silicon raw material and the high quality multicrystalline or low cost quasi-monocrystalline silicon ingot growth technology, for the example, low cost floating cast growth method, low cost EMC monocrystalline growth method, and other low cost monocrystalline silicon growth method. We evaluate such materials by our standard cell process. (2)FY2011 results; 1. High efficiency technology development: We are carrying out the improvement and the elementally technology development such as the study for materials and interface control method for back side structure, and the process of the emitter formation technology. We got the following result in this fiscal year. Isc=8.70A, Voc=0.636V, F.F.=0.781, Eff.=17.7%( measured by The National Institute of Advanced Industrial Science and Technology: AIST) using 180 micron thick multicrystalline silicon wafer with standard cell structure (non back-contacted structure). By this method, we confirmed the improvement of the external quantum efficiency for the short wavelength side and the long wave length side together. In FY2012, We will perform element technology development about electrode formation technology, p-n junction formation technology, and back side passivation technology sequentially. 2. Evaluation of the materials provided from the sub-theme for research and development of the low cost poly silicon raw materials and quasi-mono crystalline silicon wafer: Because there was no sample offered to evaluate, there is no result of evaluation.
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