成果報告書詳細
管理番号20110000000643
タイトル*平成22年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(メカニカルスタック)
公開日2011/8/25
報告書年度2010 - 2010
委託先名国立大学法人東京農工大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等
(1) 研究開発の内容
高融点無機半導体太陽電池から有機半導体太陽電池まで多種類の材質の太陽電池間の接合を実現するために太陽電池多接合用透明導電接着要素技術及び材料の開発とその実証を行う。
1)ZnO, SnO2, ITO 等の透明酸化物導電体微粒子を調査及び開発し、粒径、光学特性、伝導特性等本課題に好適な導電体微粒子の形成技術を確立する。
2)接合抵抗の理論的目標を数値解析により明らかにする。22 年度末の目標を接合抵抗2 Ωcm2、接合部の透過率70%以上とする。
3)半導体基板の接合を実証する(21 年度目標)。22 年度末は分光感度の異なるソーラーセル接合を実現し、2 種類以上のソーラーセルによる二端子セル形成を実証する。
英文要約Title : Exploring novel thin film multi-junction solar cells with highly-ordered structure(Development of mechanical-stack techniques) (FY2008-FY2012)FY2010 Annual Report
1. We have developed transparent and conductive adhesive using Polyimide and ITO particles. 20-~m-diameter ITO particles were dispersed in Polyimide liquid. Polyimide liquid adhesive including ITO particles was coated on a substrate. Another substrate was subsequently placed on the adhesive. Heat treatment at 170oC solidified the adhesive. A high transparency of 80% in visible and near-infrared range was achieved. A low connecting resistance of 2.2 ~cm2 was also achieved when 0.05-g-ITO particles were included in 1 cc of Polyimide. Those characteristics maintained during heat cycles between RT and 130oC for 200 h.
2. We have investigated mechanical stack over the large area. We found three kinds of organic binders, which well glued substrates with an area of 100 cm2 blow 50oC. They had a good transparency of almost 90%. They will be good candidates of adhesive material for mechanical stack of solar cells with large area.
3. We experimentally demonstrated multi-junction solar cells by stacking a-Si:H p-i-n cells with an area of 1.08 cm2 on a Hetero-junction with Intrinsic (HIT) type silicon solar cells with an area of 0.58 cm2 using the Polyimide-ITO adhesive. The a-Si:H p-i-n and HIT type cells were given by AIST Gp. The stacked cell resulted in a high open circuit voltage (Voc) of 1.34 V although the a-Si:H p-i-n and HIT type cells individually gave Voc of 0.86 and 0.58 V, respectively. The high Voc of 1.34 V means that top and bottom solar-cells simultaneously generated electric powers. However, the current density was low. This was because the top a-Si:H p-i-n cell seriously shaded the bottom HIT type cell because of high optical reflectivity of the a-Si:H p-i-n cell in near infrared range. Optimizing structures between top and bottom cells will be necessary for effective light illumination to each cell.
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