成果報告書詳細
管理番号20110000000656
タイトル*平成22年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(ガラス基板上の単結晶シード層)
公開日2011/8/25
報告書年度2010 - 2010
委託先名コーニングホールディングジャパン合同会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 高度な秩序構造である単結晶半導体を太陽電池に適用した場合、非晶質または多結晶の材料を利用する場合より高いセル効率が期待できる。本サブテーマでは、透明なガラス基板上のシリコン等の単結晶薄膜を基板として用い、当該シリコン等単結晶薄膜上に単結晶エピタキシャル成長を行うことにより、本事業の目標達成の基礎となる低欠陥のシリコン・ゲルマニウム等の狭バンドギャップ単結晶シード層薄膜を開発する。
英文要約Title: New Energy Technology Development, Research and Development on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program), Research and Development on Highly-Ordered Thin-Film Multi-Junction Solar Cells (Single Crystal Seed Layer on a Glass Substrate) (FY2008-FY2012) FY2010 Annual Report
We have succeeded in the epitaxial growth of single crystal SiGe films (Ge content: 0.1 to 1.0, thickness: about 3 micron) on Si and silicon-on-glass (SiOG) substrates by reactive thermal (RT)-CVD using SiH4, GeH4, and F2 gases and also by MBE using solid sources. The growth rate of RT-CVD Si0.5Ge0.5 films reaches up to 3.8 nm/s by increasing the gas flow rate. We have also drastically reduced the contaminations in the deposited films by the use of fluorine resistant materials in the deposition chamber. The a-Si/c-SiGe heterojunction cells showed the photovoltaic current but still have difficulty in conversion efficiency probably due to the remained contaminations and the defects at the interfaces. Etch pit density (EPD) observation using diluted Secco etchant suggested that the dislocation density near the surface in the MBE Si0.5Ge0.5 film (bandgap: 0.9 eV, thickness: 2.1 micron) on a SiOG substrate with the graded composition and the low-temperature grown buffer layers is about 7x10E4 cm-2 and that of the RT-CVD Si0.5Ge0.5 film (thickness: 5.2 micron) without a buffer is about 4x10E5 cm-2. On the other hand, the cross-sectional TEM images indicated that the dislocation density at the surface of the MBE sample is 4x10E9 cm-2 and that of the RT-CVD sample is 4x10E8 cm-2. This discrepancy may come from the measurement uncertainty of the both methods.
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