成果報告書詳細
管理番号20110000001132
タイトル*平成22年度中間年報 ナノテク・先端部材実用化研究開発/InGaN系ナノコラム結晶による新世代映像表示デバイスの開拓
公開日2011/9/9
報告書年度2010 - 2010
委託先名セイコーエプソン株式会社 学校法人上智学院
プロジェクト番号P05023
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等 (1) 研究開発項目「(1)ナノコラム結晶の輝度・効率優位性の検証」 ・緑色域(波長515nm)で発光する規則配列ナノコラム結晶のフォトルミネッセンス(PL)特性の温度依存性について検討した。サンプルはrfプラズマ分子線エピタキシー(rf-MBE)で作製したが、直径272nmのGaNナノコラムを周期425nmで三角格子状に規則配列させ、最上部に3ペアのInGaN/GaN多重量子井戸(MQW)を成長した。
英文要約The development project named “Development of New-generation Projection Display Devices by InGaN-based Nanocolumn Crystals” started in fiscal year 2010. We are aiming to develop the fundamental technology of nanocolumn LED panels for the new method of projection display presented in this project, studying five research subjects, i.e. 1) superiority in emission efficiency of the nanocolumn crystals, 2) green/red-light nanocolumn LEDs, 3) device process technology for nanocolumn LEDs, 4) array process and light emittion from nanocolumn LED arrays, and 5) nano-pattern technology for large area nanocolumn LEDs. The interim findings in the fiscal year 2010 are briefly summarized as follows.
1) Photoluminescence properties of green emission (515 nm in wavelength) InGaN-based nanocolumn arrays were investigated clarifying that the internal quantum efficiency was 61 %.
2) Ti-mask nanohole patterns, in which nanoholes were arranged in triangular lattice with the period of 400 nm, were fabricated realizing the nanoholes with the diameter from 50 nm to 175nm. Using the Ti-mask nanohole patterns, the initial growth behavior of GaN nanocolumns was studied and the InGaN-based nanocolumn arrays were fabricated with the selective area growth of GaN. The uniformity in nanocolumn diameter and shape was confirmed for the 10-um-square of the nanocolumn array area.
3) InGaN/GaN multiple quantum wells (MQWs) were integrated at the top region of the GaN nanocolumn arrays observing blue to green photoluminescence emissions. The thermal type atomic layer deposition and rapid thermal annealing apparatuses were purchased and the basic operations were checked.
4) Mg-doped GaN layers were grown on high-doped n-type GaN realizing pn junctions. From the backward C-V characteristics of the pn jucntions, the p-type carrier density of 3.2E18 cm-3 was estimated. The simplified device process of the InGaN-based nanocolumn LEDs was investigated and the green light emission was observed under the DC current injection.
5) Basic process technology for nanocolumn LED pixel arrays was investigated, in which electric isolation of 30-um-pitch pseudo-pixels, which were fabricated with dry-etching a test semiconductor layer, was confirmed and the 2 um wiring-width of electrode patterns was demonstrated.
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