成果報告書詳細
管理番号20110000001167
タイトル*平成22年度中間年報 ナノテク・先端部材実用化研究開発/革新的な高性能有機トランジスタを用いた薄型ディスプレイ用マトリックスの開発
公開日2011/9/9
報告書年度2010 - 2010
委託先名国立大学法人大阪大学 ヤマナカヒューテック株式会社 大阪府立産業技術総合研究所 国立大学法人広島大学 日本化薬株式会社 株式会社クリスタージュ
プロジェクト番号P05023
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等
1.1アルキル鎖長の異なる様々なπ共役系有機化合物の合成
前年度の研究において,[1]ベンゾチエノ[b]ベンゾチオフェン(BTBT)骨格への系統的なアルキル基導入とその溶解性,物性への影響を調査した.その結果,室温での溶解性とデバイスでの特性から,C8~C10誘導体が最適であるとの結論を得,さらにこれらの大量合成法を検討し,確立した.一方で,BTBT構造をモチーフとした材料探索において,BTBT骨格の外側にさらにベンゼン環が縮合したジナフトチエノチオフェン(DNTT)へのアルキル基導入を行ったが(2,9-ジアルキルDNTT誘導体),室温での溶解性が低く通常の塗布プロセスでの製膜が必ずしも容易ではないことが明らかとなっていた.本年度は,アルキル鎖長の異なるDNTT誘導体を合成し,その溶解性の調査,さらには,下記「1.3合成法の最適化」とも関連するが,DNTT誘導体の新規高効率合成法を開発に成功したことで,従来の置換位置とは異なる位置にアルキル基を導入したDNTT(3,10-ジアルキルDNTT誘導体)の合成にも成功した.本項に関連する主な成果は以下のとおりである.
英文要約In the present research program, we are developing high-performance solution-crystallized organic field-effect transistors (OFETs) and active-matrix panels based on our novel OFETs. In FY2010, we have achieved significant progresses in 1) basic consideration of the solution-crystallizing conditions and further enhancement in the transistor performances, 2) fabrication techniques of the transistor arrays and designing the active matrices, and 3) high-performance solution-processed three-dimensional OFETs of our own innovation.
  1) Development of a new organic semiconductor compound C10-DNTT has driven the performance of solution-processed organic transistors significantly. Solvents, temperature, and concentration in the solution are investigated to optimize the condition to fabricate the high-performance solution-crystallized OFETs. Among several possibilities in the above selection, the use of C10-DNTT molecules and o-dichlorobenzene for the solution at 100 degrees centigrade with the concentration of approximately 1 g/L was the best to prepare good-looking homogeneous crystalline films.
  In order to investigate their crystalinity, high-energy X-ray source in KEK is employed. Very well-defined Bragg spots appeared at the right positions in the k-space as is predicted by the known crystal structure for the bulk material of C10-DNTT. The result clearly evidences that our solution-processed films are really single crystalline over the sub -millimeter region of the devices.
  With the optimized fabrication processes, our state-of-the-art devices show mobility as high as 11 cm2/Vs, which is the highest among all solution-processed OFETs reported so far. In addition, significant improvement in their threshold is realized with the use of acceptor-treatment technique, which we developed ourselves.
  2) Prototype transistor arrays are prepared with periodically arranged solid structures to initiate the crystal growth, so that the crystalline films grow only at the positions next to the structures. Even the averaged mobility of 4 X 4 matrix reached 7 cm2/Vs, which is pronounced in the present standard.
  Concomitantly, designing the whole processes of fabricating liquid-crystal displays is underway to demonstrate the performance of our high-mobility OFETs, which exceeds that of amorphous silicon by almost an order of magnitude. The first prototypical device is already prepared, so that liquid-crystalline response is observed within 1kHz frequency.
  3) For the three-dimensional devices, we are developing high-frequency devices with the use of submicrometer-channel devices. The highest frequency reached 10 MHz with the best devices.
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