成果報告書詳細
管理番号20110000000619
タイトル*平成22年度中間年報 近接場光相互作用を用いた自己完結型超平坦物質形成技術の開発
公開日2011/10/12
報告書年度2010 - 2010
委託先名(国)東京大学 シグマ光機株式会社
プロジェクト番号
部署名エネルギー対策推進部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等 (1) 超平坦薄膜堆積技術の開発 セラミックス基板として必要となるRa値0.2nm以下を実現するために、平面基板に対して下記に示す研究開発を行い、本年度の目標を達成する成果を得た。 ア)研磨傷の選択的修復のための最適条件の探索 平成22年度の目標:研磨傷が選択的に埋まることを確認する。
 昨年度までの予備実験を基に、セラミック基板の研磨傷が選択的に埋まることを原子間力顕微鏡(AFM)により確認した。
英文要約Project “Development of self-organized deposition method of ultra-flat surface using optical near-field effect”
Summary of FY2010
In FY2010, we accomplished all goals. The details in each section are described below.
1. Development of a deposition method of a thin film with an ultra-flat surface
a) Goal in FY2010: Realization of the selective repairing the scratched grooves.
To repair nanoscale scratched grooves on ceramics, we performed the laser assisted sputtering. The illumination of 532-nm laser under the sputtering of Al2O3, we confirmed the sputtered nanoparticles of Al2O3 was selectively deposited on the grooves, and as a results, we obtained the ultra-flat surface of Al2O3.
In summary, we accomplished the goal in FY2010.
b) Goal in FY2010: Clarification of the criteria for the decrease in the value of Ra.
To clarify the mechanism of the selective repairing of laser-assisted sputtering, we introduced the atomically flat substrate of sapphire. The deposition of Al2O3 without illumination resulted in the selective deposition at the step edge of the sapphire (Fig. 1(a)), while the deposition of Al2O3 with the illumination results in the no deposition of the nanoparticles at the step edge (Fig. 1(b)). These results supported our model of the phonon-assisted selective deposited at the nano-scale structure.
Furthermore, we evaluated the value of the surface roughness Ra, and found that the significant decrease in the value of Ra using laser assisted sputtering of 10-minutes deposition time as small as 0.18 nm (Fig. 2).
In summary, we accomplished the goal in FY2010.
c) Goal in FY2010: Realizing the reproducibility of the evaluation of Ra value.
To evaluate the Ra value described in 1.b), we introduced CNT probe for an atomic force microscope (AFM). Since the CNT probe keeps the tip diameter, it is expected to result in the same spatial resolution during the scanning. Using the CNT for sapphire substrate with atomic step, we confirmed that the usage of CNT probe resulted in higher reproducibility of evaluation of Ra value than usage of the pyramidal Si probe (Fig. 3)
In summary, we accomplished the goal in FY2010.
2. Development of an optical near-field etching method
a) Goal in FY2010: Reduction of Ra value in gallium nitride (GaN) and polymethyl methacrylate (PMMA) to 0.3 and 0.5 nm, respectively.
The optical near-field etching of GaN and PMMA substrate was carried out. Etching condition, such as gas flow rate and etching time, was changed to improve surface flatness. Figure 4 shows AFM images of PMMA substrates before and after the optical near-field etching. Ra value was reduced from 1.11 nm to 0.49 nm by the etching. Similarly, Ra value was reduced from 0.32 nm to 0.23 nm in the case of GaN substrate.
In summary, we accomplished our goal in FY2010.
b) Goal in FY2010: Development the evaluation method of the surface roughness.
To evaluate the surface topology, we introduced the correlation length. We found that the correlation length decreased as etching time increased (Fig. 5(a)). This result indicated that the width of the protrusions decrease in the process of the flattening (Fig. 5(c)).
 In summary, we accomplished the goal in FY2010.
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