成果報告書詳細
管理番号20110000000943
タイトル*平成22年度中間年報 固体酸化物形燃料電池システム要素技術開発 基礎的・共通的課題のための研究開発
公開日2011/10/12
報告書年度2010 - 2010
委託先名独立行政法人産業技術総合研究所
プロジェクト番号P08004
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等 (1)スタック長期運転並びに起動停止時の信頼性評価 中温筒状平板形耐久性の評価 「信頼性向上プロジェクト」で今後の課題として抽出された電流集中の影響や空気極中間層での変化などを更に改善するため、発電温度の効果と電流密度の耐久性に与える影響について検討し、試験後の物質の拡散状態ならびに組織の変化を検討した。平成22年度の耐久試験項目として、1)定電流耐久試験、2)起動停止試験、3)断熱材暴露試験などをおこなった。
英文要約Title: Development of System and Elemental Technology on SOFC/ Fundamental Study for Improvement of Durability
(FY2008-FY2011)
FY2010 Annual Report(National Institute of Advanced Industrial Science and Technology (AIST))
◎ Improvements of stack durability
1. Improvement of durability of flatten tube stacks
In order to improve the stack durability, the following points were examined in FY2010
(Kyocera corporation made the stack and tested):
1) durability tests under constant current density
2) thermal cycling tests
3) exposure to thermal insulating materials.
A constant current durability tests were conducted at 750 oC-0.2A/cm2 and 800 oC-0.3A/cm2 for more than 4000
hours. At 750 oC-0.2A/cm2, the voltage degradation rates showed 0.3-0.4%/1000h, while those at800 oC-0.3A/cm2
showed 0.9-1.0%/1000h. These values were better values than those examined in FY2009. Therefore, an improvement of durability has been accomplished under constant current condition. The effect of thermal cycling was examined after
operating more than 2000 h. The voltage degradation rate after 100 times thermal cycling was 0.35%,
which was stable enough to operation. Under exposure to thermal insulating materials, the voltage degradation rates
showed 1.0-1.5%/1000 h at 800 oC. These values were relatively large values for the constant current condition.
2. Improvement of durability of segment-in series flatten tube stacks
The durability test was conducted at 0.24A/cm2 with different operation temperatures of 775 oC and 800 oC (Tokyo Gas Corporation made the stacks and operated). The durability tests showed an initial degradation of 1.3-1.4%/1000h and low degradation rates at the latter operation. The degradation rates for 4000 h- 5000 h were 0.31 %/1000h at 775 % and
0.24 %/1000h at 800 oC. These values are close to the target value of 0.25%/1000h. The degradation factors were
picked up from the cell levels to system levels. The ohmic resistance increase is the main degradation factors in this
type of stack.
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