成果報告書詳細
管理番号20110000001315
タイトル*平成22年度中間年報 次世代高効率ネットワークデバイス技術開発(3)
公開日2011/11/26
報告書年度2010 - 2010
委託先名技術研究組合光電子融合基盤技術研究所
プロジェクト番号P07012
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 【光NIC 用省電力インタフェース技術】 光NIC用省電力インタフェース技術に関しては、LAN-SANシステム適用を目指した上で、小型光送受信モジュールとして、高速動作(40Gbps)と低電力化(LAN-SAN システム全体で、従来品に対し40%の低電力化)を最終目標として進めている。H22 年度は、前年度に試作した超小型光送受信モジュールの特性評価を進め、40G VSR、新規に規格が検討されている40G シリアルイーサネットの光インタフェース規格を満足する事を確認した。光送受信モジュールの消費電力は5.6W であり、従来品に対し約75%の低電力化を実現でき、モジュール単独で最終目標を達成した。これらの成果をまとめOECC-2010 国際会議で発表した。
LAN-SAN システム適用のため、試作モジュールの電気/光インタフェース仕様書を作成し、システムとの整合性を確認した。(富士通:川崎2 分室)
英文要約Development of Next-generation High-efficiency Network Device Technology
(FY2007-2011) FY2010 Annual Report
(1) Low power interface technology for optical network interface card: We made an ultra-small 40Gbps optical transceiver. We confirmed that it satisfied the optical interface specifications of both 40G VSR and newly standardized 40G Serial Ethernet, and the power consumption is 5.6W.
(2) Ultra-compact 100 Gbps optical transceiver: Micro 100-Gbps transceiver modules was fabricated on a 9 mm x 14 mm ceramic package using a fully integrated CMOS transceiver chip, and optical devices(LD,PD), all of that developed in this project, and 25 Gbps optical transmission was demonstrated. We have completed assembly of the optical transmitter/receiver module for using the form factor and confirmed the excellent characteristics. The transceiver modules were mounted on a router board and displayed at the exhibition OFC2011.
(3) LAN/WAN high capacity signal conversion technology: A 40G Ethernet interface conversion circuit TEG was evaluated. We presented evaluation results on the interface conversion circuit at ACP2010, OECC2010, and OFC2011. Then, we studied on a LAN-SAN system demonstration with 40G LAN-WAN signal conversion and 40G Ethernet interface conversion circuits. We confirmed the connectivity between the 40G LAN-WAN conversion and 40G Ethernet conversion circuits.
(4) Ultra-high speed, low-power-consumption surface-emitting lasers: Four-channel 25-Gbps direct modulation of 1.3-µm surface-emitting laser array was demonstrated. This laser array consists of short-cavity InGaAlAs-based multiple-quantum-well distributed-feedback active stripes with length of 150 µm, monolithic total-reflection mirrors, monolithic aspheric lenses, and flip-chip bondable electrodes. This structure provides low threshold currents and high-speed characteristics because of the optimum length of the stripes. The fabricated laser array exhibited low-threshold currents (6.5 mA on average) and world-first 4-channel 25-Gbps eye openings at 85℃.  
(5) High-speed lasers for direct modulation: For the AlGaInAs laser technology, 40-Gbps direct-modulation under a low driving current below 50 mA at room temperature was achieved in both 1.3 and 1.55-µm-wavelength lasers. As for the quantum-dot laser technology, 25-Gbps high-speed operation at room temperature was realized.
(6) Highly efficient semiconductor optical amplifiers: We have been developing a quantum dot semiconductor optical amplifier (QD-SOA) aiming at the high-efficient and high-temperature operation for OTDM-NICs in LAN-SAN systems. This year, technological key points to be solved for the 4-channel operation in arrayed SOA devices have been clarified. We confirmed that the 250-µm separation between channels was required to circumvent the gain characteristics of SOA devices degraded owing to thermal crosstalk. We succeeded in achieving the redshift of the gain peak from 1500 nm to 1550 nm while maintaining a quality of quantum dot by improving the crystal growth technique.
(7) Wavelength converter with wide dynamic range: We design and fabricate a wavelength converter integrated with a PD for input level monitor and a SOA at its input signal port. With feedback control from the PD to the SOA, which works as an amplifier or a VOA, the wavelength converter achieves 14dB dynamic range of the input signal power wavelength conversion at 10Gbps.
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