成果報告書詳細
管理番号20110000001372
タイトル*平成22年度中間年報 ナノエレクトロニクス半導体新材料・新構造ナノ電子デバイス技術開発 ナノワイヤFETの研究開発
公開日2011/12/13
報告書年度2010 - 2010
委託先名国立大学法人東京工業大学
プロジェクト番号P09002
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 (1)研究開発の内容
本研究開発ではSi ナノワイヤFET を対象として、その性能がバルクFET を凌駕するために必要なデバイス構造と技術を検討することを目的とする。第一原理計算を用いた量子論によるSi ナノワイヤの物性解明、伝導のコンパクトモデルの構築、先端試作ラインを用いたSi ナノワイヤFET の作製を行う。以上の結果を踏まえ、実用化への本格的な研究開発を行なうためのSi ナノワイヤデバイスのロードマップの作成を行う内容である。
英文要約Title: Development of Nanoelectronic Device Technology Project,“Research on Nanowire FET”, (FY2009-2011) FY2010 Annual Report
Si nanowire field-effect transistors (FET) are one of the candidates for future large-scale integrated circuit (LSI) with enhanced performance as well as reduced power consumption. This project aims to model and prove the potential performance of Si nanowre FETs, based upon physical natures of nanowires as well as its process implementation compatible with conventional technologies. This year we can categorize our results into 7 topics. Firstly, the electronic bands of Si nanowires up to 8 nm, which has more than 10,000 atoms, with different orientations have been calculated by first-principle calculations. Based on the ballistic Natori model, we have confirmed that an on-current of 120 uA can be obtained with a <100> directed nanowire. Secondly, based on the analysis of refined Si nanowire FET compact model, which includes elastic and inelastic scatterings, the ballisticity of the FET can not go further than 0.7 even at a gate length of 0. This fact is due to the presence of elastic scattering in the optical phonon region. Thirdly, the local conductivity of the carriers in rectangular-shape Si nanowires has been extracted based on effective mass approximation and Kubo-Greenwood formula. The enhancement of the conductivity near the corner has been obtained owing to the increase in the number of carriers, although the mobilities are degraded. Fourthly, the interface state located at silicon dioxide and Si nanowire has been detected with photoluminescence method. We confirmed the luminescence of originated from the states. Details will be discussed very soon. Fifthly, the enhancement of the on-current with small nanowire FET has been investigated. The proportion of the current flowing at the rounded corners of the nanowires becomes larger with smaller nanowire FETs. This fact gives a guideline for designing Si nanowire FETs with further higher performance. Sixthly, the basic mechanism of the Ni silicidation to SiO2 covered Si nanowires have been investigated. The dominant diffusion has been found to be volume diffusion, whereas those without SiO2 is surface diffusion. Finally, the importance of Si nanowire FET research has been reconfirmed based on the technological trend in semiconductor field. The impact of Si nanowire may include not only logic but also memory applications.
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