成果報告書詳細
管理番号20110000001768
タイトル*平成22年度中間年報 「省エネルギー革新技術開発事業/挑戦研究/チップ間信号伝送用マイクロ波発振素子の開発 」
公開日2012/1/13
報告書年度2010 - 2010
委託先名国立大学法人東北大学 独立行政法人産業技術総合研究所
プロジェクト番号P09015
部署名省エネルギー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等
本挑戦研究では、最終的にはシステムインパッケージ(3次元実装、3次元集積)を実現するための「簡素で高効率かつ低消費電力な真の無線通信技術」を確立するため、スピン注入自励発振・共鳴型である微小磁性体を用いた新規なマイクロ波発振器の研究開発を行う。実用化までのマイルストーンとしては、図1に示すような開発ステップを想定しており、本挑戦研究では、微小磁性体を用いた新規なマイクロ波発振素子の高出力化・高Q化(1μW級、Q値≧1000)、フェーズロック機構の開発(10μW超級高出力化設計)、低消費電力無線信号伝送の検証などの基礎技術の開発を行い、実現可能性を検証する。続く先導研究では受信機構の開発、送受信デバイスの試作開発、超小型・高効率信号伝送技術の開発などプロトタイピングを完了し、2015年~2017年の実用化研究(製造技術)、2018年~2020年の実用化開発(製品開発)へと展開、2020年以降の低消費電力SiP製品のLSI市場への投入を目指す。本挑戦研究は、究極の無線インターコネクト技術の開発の第1ステップであり、可能性を検証する重要なフェーズと位置づけている。
英文要約1. Research Subject: Development of the microwave oscillator for wireless chip to chip interconnection in 3D-Integration-Technology
2. Entrusted group: Graduate School of Engineering, Tohoku University
         National Institute of Advanced Industrial Science and Technology
To realize "More Than Moore Technology", the digital communication techniques with high speed and low power consumption, enabling higher interconnectivity between circuit components such as the integration of a new generation of System-in Package (SiP), are highly requested in the Silicon 3D-Integration Technology field. In sight of this background, the purpose of this project is to develop a breakthrough technique for the wireless interconnection between chips by using of "Spin-Torque Oscillator (STO) and ST-FMR Receiver". "Nano-Constriction Structured Spin Transportation Systems" such as Nano-Contacts magnetoresistive (NCMR) devices with "Nano-Confined Domain Wall" is regarded as one of the most promising next-generation "Spin-Torque Oscillator and ST-FMR Receiver" that could enable the realization of future communication with high speed and low power consumption between chips. However, in the Nano-Constriction Structured Spin Transportation System, a novel structure consisting of nanometer-sized constricted dots/channels as well as a new physical scheme for electron/spin transportation should be devised. In this research project, a strong collaboration between two groups of Tohoku University and National Institute of Advanced Industrial Science with specialties in material science, device physics, characterization/simulation and evaluation/analysis will promote an establishment of the output power of ~1μW with high Q value: i.e. (f/Δf)≧1000 of STO device. The final target of output power is set to ~10μW by using a phase locking technology for the development of the Nano-Constriction Structured STO and ST-FMR Receiver" for high speed and low consumption-power communication techniques. In this year, we have succeeded in confirming higher MR ratio of nearly 40% with the resistance area product of 1Ωμm2 in self-assembling NCMR devices with "Nano-Confined Domain Wall". Furthermore, several unique characteristic microwave oscillations and modulation effect were observed in the NCMR elements with a spin-valve structure. Especially, we have succeeded in realizing high- power microwave oscillations of ~70nW with narrow line-width of ~6MHz in the specific angle (~140°) between free and reference layer magnetizations. This angled field effect well agrees with the results from the simulation of geometrically confined domain wall by AIST group. From the results, it is confirmed that the coherent oscillation in NCMR SV element originates from the geometrically nano-confined DW, which is also verified as ARC image of MFM observation done in this year.
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