成果報告書詳細
管理番号20110000001699
タイトル*平成20年度中間年報 「近接場光エッチングを用いた光学素子用基板表面のサブナノ平坦化技術の開発」
公開日2012/2/17
報告書年度2008 - 2008
委託先名シグマ光機株式会社 国立大学法人東京大学 国立大学法人徳島大学
プロジェクト番号
部署名省エネルギー技術開発部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等
(1)平面基板の近接場光エッチングによる平坦化技術の開発
次世代のレーザ用光学素子向けの平坦基板(基板大きさφ30mm)として必要となるRa値0.1nmを実現するために、下記に示す研究開発を行い、本年度の目標を達成する成果を得た。
ア)近接場光エッチング用反応炉の製作(東京大学)
平成20年度の目標:近接場光エッチング用反応炉を製作する。
昨年度までの予備実験を基に、R a値低減のために必要なガス流量(100s ccm程度)および圧力(数10~数100Pa 程度)などが設定可能な装置を設計し、導入を行った。Fig.1 に実際に構築した装置の写真を示す。本装置は、想定している条件にて正常な動作を確認済みであり、運用開始している。
以上により、本年度の目標である近接場光エッチング用反応炉を製作することは達
成された。
英文要約Title: Stategic Development on Rationalization Technology using Energy
Project: Realization of an ultra-flat substrate for optical components with
sub-nanometer scale roughness using optical near-field etching (FY2008-FY2010) FY2008 Annual Report
Summary of FY2008:We accomplished all goals. The details in each section are described below. 1)Realization of an ultra-flat substrate with a plane surface using optical near-field etching a) The installation of an optical near-field etching process system : We designed the chamber for the near-field etching. In which, based on our preliminary experiment, we optimized the flow rate of the etching gas (100 sccm) and the chamber pressure (10 to severa1 100 Pa). c) The installation of an experimental set-up to determine
the mechanism of the damage caused to a substrate surface by irradiation : We designed a time-resolved pump-probe set-up , in which the scattered probe light is detected while the probe light is inducing damage. We introduced a femtosecond laser system, a delay-line system, and the related optical components in FY2008. Using the femtosecond laser system, we conducted a preliminary experiment and found that the femtosecond laser has enough power to damage a silica substrate. 2) Realization of an ultra-flat substrate with a convex surface using optical near-field etching. a) Developing the rotational stage in the near-field etching chamber : To realize the ultra-flat surface of convex lens, we designed the rotational stage which can be installed in the near-field etching chamber. By which, uniform optical power density and gas presser all over the substrate can be realized. In summary, we accomplished our goal in FY2008. b) Goal in FY2008: The installation of an atomic force microscope to measure the substrate with a convex surface (Dia = 30 nm, R=50mm) : The AFM which was installed to measure the Ra value of the flat substrate described in 1) b) can evaluate the Ra value of the substrate with a convex surface (Dia = 30 mm and R = 50 mm). In summary, we accomplished the goal in FY2008. 3)Developing simulation method of an optical near-field etching a) Goal in FY2008: Developing a finite difference time domain program with an additional function estimating near-field component for the nonadiabatic photochemical reaction : we have successfully developed a finite difference time domain program which includes an additional function estimating near-field component for the nonadiabatic photochemical reaction.
Based on the results obtained by the authors of the University of Tokyo, the new program was modified to calculate the near-field component using the optical field intensity ditribution. In summary, we accomplished the goal in FY2008.
b) Goal in FY2008: Developing a prototype program calculating surface shape
during the etching : To develop a program calculating surface shape during
nonadiabatic optical near-field etching, we have introduced a parallel computing system with a file server and several softwares for post-processing and visualization. A prototype program calculating surface shape during the etching has been developed and shown that the surface shape strongly depends on etching
conditions related to characteristics of the material, light intensity and so on. In summary, we accomplished the goal in FY2008.
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