成果報告書詳細
管理番号20120000000151
タイトル*平成23年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(ヘテロ接合デバイス化~超高周波プラズマ)
公開日2012/6/20
報告書年度2011 - 2011
委託先名三菱重工業
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: New Energy Technology Development, Research and Development on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program), Research and Development of Thin Film Multi-Junction Solar Cells with Highly Ordered Structures (Hetero-junction device - VHF (Very High Frequency) Plasma. (FY2008-2012) FY2011 Annual Report

The project purpose is development of solar cell devices with hetero-junctions which prevent the efficiency degradation, by improving the temperature characteristics of solar cells with mono-crystalline/quasi-mono-crystalline Si-Ge based thin film. We have investigated hetero-junction solar cells using c-Ge substrate and found that PH3 exposure treatment improved solar cell characteristics, and we obtained conversion efficiency of 6.54% in FY2010. For further improvement of surface treatment processes, the followings were carried out in FY2011: (1) evaluation of the PH3 exposed interface using AES and SIMS, (2) evaluation of the band structure using SCM and XPS, and (3) investigation of the influence of the a-Si:H(i) layer deposition condition on solar cell characteristics. (1) We confirmed the adsorbed phosphorus onto c-Ge surface after PH3 exposure treatment using AES, and the residual phosphorus at the a-Si:H(i)/c-Ge interface after solar cell processing using SIMS. The residual phosphorus density was able to be controlled by the exposure conditions and the solar cell performance depended on the residual phosphorus density. (2) The band structure of the a-Si:H(i)/c-Ge interface with or without PH3 exposure treatment were investigated using SCM. The interface carrier density gradient was clearly different and it suggests that phosphorus acts as the donor. The valence band and the conduction band offset of the a-Si:H(i)/c-Ge interface were estimated to be 0.62eV and 0.42eV using XPS. (3) We confirmed the effect of the a-Si:H(i) layer deposition conditions on the solar cell characteristics and found that the deposition conditions have an affect on them as well as the surface treatment conditions. These results suggest that the hetero-junction interface properties are essential for improving the solar cell performance.
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