成果報告書詳細
管理番号20120000000152
タイトル*平成23年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(フッ素系イオン制御プロセス、pn接合内蔵CNT)
公開日2012/6/20
報告書年度2011 - 2011
委託先名東北大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Exploring multi-junction thin-film solar cells with highly ordered structures (FY2008-2012) FY2011 Annual Report

Single-walled carbon nanotubes (SWNTs) are quasi one-dimensional materials exhibiting interesting electrical and optical properties, and their semiconducting properties can be controlled by the encapsulation of the other materials, which makes them promising candidates for fabrication of solar cells.
In our previous work, the possibility of making infrared solar cells based on the fullerene encapsulated p-type SWNTs and n-type silicon has been systematically investigated. It is found that the SWNTs show a promising potential as energy conversion material which can be used to convert the infrared light (800-1550 nm) into the electrical energy.
In this report, we indicate that the performance of the infrared solar cells based on the SWNTs can be further improved by gold (Au) nanoparticles decoration. The short-circuit current is found to show a great improvement by Au nanoparticles due to the decrease in the contact resistance between the SWNTs. The photocurrent indicates a 5-10 times increase compared with the case of solar cells constructed with the SWNTs without Au decoration. Our findings reveal that Au nanoparticles have a great potential in the application of SWNTs-based solar cells.
On the other hand, we have made two kinds of infrared solar cells using only SWNTs without silicon, because the silicon cannot absorb the infrared light, resulting in the low energy conversion efficiency in the infrared region. One is fabricated by p-type and n-type SWNTs thin films and the other is formed by the p-n junction embedded SWNT. The plasma irradiation method and thermal diffusion method are used for encapsulation of cesium and potassium into the SWNTs.
The p-type and n-type SWNTs thin films solar cell shows the photovoltaic power generation under light illumination of a solar simulator and an infrared LED. It is found that the open-circuit voltage and the short-circuit current are changed by the condition of the plasma ion irradiation to the SWNT, which can control the cesium encapsulation ratio and the damage of the SWNTs. The solar cell based on p-n junction embedded SWNT also generates photovoltaic power under the infrared light. In this p-n junction embedded SWNT solar cell fabricated by the plasma ion irradiation method, the energy conversion efficiency is found to be larger than 2%, which is attributed to the utilization of the high mobility of SWNTs along the axis.
Based on these results, it is expected to fabricate the high efficient solar cells using SWNTs functionalized by the plasma ion irradiation method.
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