成果報告書詳細
管理番号20120000000153
タイトル*平成23年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(ヘテロ接合デバイス化~低ダメージ成膜)
公開日2012/6/20
報告書年度2011 - 2011
委託先名京セラ
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research and Development of Thin Film Multi-Junction Solar Cells with Highly Ordered Structures (Hetero-junction device - Low Damage Deposition) (FY2008-2013) FY2012 Annual Report

[Objective in FY2012] We aim to achieve η=9% and Voc=0.3V on the bottom cell in triple junction thin film solar cell with single crystalline wafer of narrow band-gap materials(≦0.9eV)such as SiGe, SiGeSn. Our final target is η≧20% as a triple junction solar cell by introducing this bottom cell. (1) Evaluation of surface treatment method of substrates: We did the verification of an achievement last year about the hot-water dipping process using de-ionized water(3-8MΩcm) for Si single crystal wafer. We performed improvement of equipment to be able to use the super pure water(>18MΩcm). At present, however, the improvement and stabilization of the water quality do not contribute enough to the increase of the minority carrier life time(micro-PCD measurement) of wafer. (2) Evaluation of substrate cleaning effect before surface treatment: We did the evaluation of substrate cleaning effect before natural oxidation layer stripping by 0.5%HF solution. As a result, The life time of Si wafer doing SC1-2 cleaning before the hot-water dipping process decreased, correspond without SC1-2 cleaning. (3)
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