成果報告書詳細
管理番号20120000000154
タイトル*平成23年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(ガラス基板上の単結晶シード層)
公開日2012/6/20
報告書年度2011 - 2011
委託先名コーニングジャパン
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: New Energy Technology Development, Research and Development on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program), Research and Development on Highly-Ordered Thin-Film Multi-Junction Solar Cells (Single Crystal Seed Layer on a Glass Substrate) (FY2008-FY2012) FY2011 Annual Report

We have succeeded in the epitaxial growth of single crystal SiGe films (Ge content: 0.5 - 1.0, thickness: > 2 micron) on germanium-on-glass (GeOG) substrates by both reactive (R-)CVD using SiH4, GeH4, and F2 and by molecular beam epitaxy (MBE), following the first success of the epitaxial growth on silicon-on-glass (SiOG) substrates in the last FY. The Ge films showed the comparable crystalline quality to the bulk crystal in Raman spectroscopy and x-ray diffraction, and the mobilities of the SiGe and Ge films are 110 to 1100 cm2/Vs.
In order to reduce the dislocation density in the SiGe films, the graded composition buffer layer grown by MBE has been inserted between the R-CVD SiGe film and the SiOG substrate. The resultant etch pit densities (EPD) on the top of the 5.9 micron-thick R-CVD Si0.5Ge0.5 films with and without the buffer layer are 1 x 10e6 cm-2 and 5 x 10e6 cm-2, respectively.
The conversion efficiency of the hetero-structure SiGe cell on Si was improved by about one order from the last FY, but is still far below our final goal. The reduction of the contaminants and defects in the films and the proper treatment of the SiGe surface are required for the further improvement.
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