成果報告書詳細
管理番号20120000000157
タイトル*平成23年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(ナノ結晶シリコン)
公開日2012/6/20
報告書年度2011 - 2011
委託先名九州大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Exploring multi-junction thin-film solar cells with highly ordered structures (FY2008-2012) FY2011 Annual Report

We have developed on Si quantum-dot (QD) sensitized solar cells, where size-controlled Si nanoparticle films were deposited using double multi-hollow discharge plasma chemical vapour deposition (CVD) process in a SiH4/H2 and CH4 gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 2.5 by irradiation of CH4 plasma to Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in near-UV range using quartz-glass plates as front panels of solar cells. Photocurrent is detected by light irradiation in a wavelength range less than 600 nm around optical band-gap (Eg) of Si nanoparticle films. We also observed a steep increase in IPCE below 280 nm, which corresponds to about twice Eg of Si nanoparticle films. This rapid increase may be attributed to multiple exciton generation (MEG), the creation of two electron-hole pairs from one high-energy photon, in Si nanoparticle quantum dots.
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