成果報告書詳細
管理番号20120000000246
タイトル*平成23年度中間年報 省エネルギー革新技術開発事業 先導研究 グリーン光リンク技術のための低消費電力面発光レーザアレイの研究開発
公開日2012/6/1
報告書年度2011 - 2011
委託先名国立大学法人東京工業大学 古河電気工業株式会社 富士ゼロックス株式会社
プロジェクト番号P09015
部署名省エネルギー部
和文要約「和文要約等以下抜粋」
1.研究開発の内容及び成果等
3つの研究チームが連携を取りながら、高歪量子井戸活性層の導入、高速化と低消費電力化を両立する新規デバイス構造などの新技術を駆使して、VCSELの革新的な低エネルギー化の実現を目指している。
英文要約Title: Developments of Low Power Consumption VCSEL Arrays for Green Optical Link Technologies (FY2011-2013) FY2011 Annual Report

1) Development of the 1060nm VCSELs with the Low Power Consumption for the Super-Computer (Furukawa Electric.)
The final goal is to develop the 25Gbpsx4ch VCSEL array with both low power consumption and high reliability for the application to the high-speed and high-volume optical link used in the industrial IT equipment such as the super-computer. The basic design of 25Gbps VCSEL was carried out by using the simulation, and VCSELs were fabricated based on the design. The measurement setup for 25Gbps was established and the evaluation was done for the VCSELs. The VCSEL with an emission wavelength of 1060nm has a double intra-cavity structure, which consists of a bottom DBR, InGaAs/GaAs active layer, oxidation layer, current spreading layers, and top-DBR layers on a GaAs substrate. The oxide aperture was formed by the selective oxidation of an AlGaAs layer with the high Al content. The eye pattern and the small signal frequency performance were evaluated by the measurement setup for 25Gbps. The 25Gbps eye opening was confirmed with a bias current of 5mA at room temperature, which results in the successful accomplishment for FY 2011.
2) Development of low consumption 850 nm wavelength VCSELs. (Fuji Xerox Corp.)
A strained quantum well can enhance lasing performances due to energy band gap alterations. In this study, we introduce InGaAs strained QW in an 850nm VCSEL instead of a conventional lattice-matched GaAs QW for a low dissipation and a higher modulation. We calculated a relation among In, Al, Ga compositions and well thickness of In(Al)GaAs QW at the wavelength of 835nm to determine a structure of an active region in VCSEL. A VCSEL structure was grown by MOCVD and was oxidized in a water vapor reactor to make a current confinement oxide aperture. Lasing characteristics of 7nm-thick In0.1Al0.08GaAs 3QWs VCSEL were measured at the temperature from -20 to 85 degC. A threshold current of VCSEL with 9um diameter oxide aperture at RT is 0.6 mA that is lower than that of conventional GaAs VCSELs. A modulation characteristic and a lifetime test are under investigation.
3) Establishment of long-term low power consumption VCSEL technologies (Tokyo Institute of Technology)
The establishment of the carrier confinement technology using quantum structure intermixing (QSI) is carried out to suppress lateral carrier diffusion. In this year, fundamental technologies for simple fabrication process and high-precision control of the QSI were investigated. We also laterally integrated a 980nm InGaAs VCSEL and slow-light electro-absorption modulator for higher modulation bandwidth and lower power consumption. A VCSEL and a slow light modulator are directly coupled, which are isolated by separating two electrodes. The threshold is 3mA. We also fabricated a solitary slow light modulator. We obtained an extinction ratio of 5dB at a low voltage swing of 1V. By making the device shorter, we expect high speed modulation as well as low power consumption at the same time.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る