成果報告書詳細
管理番号20120000000276
タイトル*平成23年度中間年報 高出力多波長複合レーザー加工基盤技術開発プロジェクト 次世代レーザー加工技術の研究開発 (3) 
公開日2012/6/1
報告書年度2011 - 2011
委託先名浜松ホトニクス株式会社
プロジェクト番号P10006
部署名技術開発推進部
和文要約1.研究開発の内容及び成果等
(1)目的・概要
本研究開発では、次世代レーザー加工技術として高出力・高品位のファイバーレーザー発振技術およびそれを利用した加工技術を開発するとともに、次世代に向けたレーザー加工の基盤技術を確立する。
本事業は大きく分けて以下3つの研究開発項目を実施するが、本報告はその内の(a)レーザー高出力化技術の開発に関するものである。
(a) レーザー高出力化技術の開発
(b) レーザー高品位化技術の開発
(c) 多波長複合加工技術の開発
本報告に係る(a)レーザー高出力化技術の開発の中間目標(平成24年度)は以下の通りである。
(a)?1 半導体レーザーの高出力化・高信頼化技術の開発
端面発光半導体レーザーシングルエミッタ15W、アレイ200Wの出力
面発光型半導体レーザーアレイ200Wの出力
(a)?2 半導体レーザーのファイバーカップル技術の開発
シングルエミッタ結合効率80%
アレイ結合効率60%
英文要約1. High power semiconductor laser technology
We have developed the device structure of 9xx-nm edge-emitting single-emitter laser diodes and laser diode arrays in order to achieve a high output power with high reliability. In the single emitter laser diodes, the available output power is limited by thermal rollover phenomenon, which occurs as a result of carrier leakage at the active region. To prevent the carrier leakage, a p-cladding layer has been optimized. An output power of 15 W and a maximum power conversion efficiency of 68 % have been achieved. However, catastrophic optical mirror damages have been observed at the facets of the laser diodes. We have started to improve the facet characteristics for the issue. As for the laser diode arrays, by optimizing the layer structure, the reflectivity of facets, the cavity length, and the structure of water-cooled heatsinks, an output power of 200 W and a maximum power conversion efficiency of 58% have been achieved. Moreover, “smile”, the bending of emitter array, has been reduced down to less than 1 micron meters.
We have developed 9xx-nm vertical-cavity surface emitting laser diodes (VCSELs) with ion implanted isolated current aperture. A maximum output power of 380 mW, a power density 4.9 kW/cm2, and a high slope efficiency of 0.96 W/A have been achieved from the single emitter with a current aperture diameter of 100 micron meters at 15 degree Celsius. A distributed Bragg reflector (DBR) structure has also been investigated in order to reduce the voltage drop in the DBR for high power operation of VCSEL array. The operation voltage has been reduced down to less than 3 V at a current of 600 mA. It is indicated that the Joule heat generated in the DBR has been successfully reduced by more than 20%.

2. Fiber coupling technology
To realize high efficiency fiber coupling to single emitter laser diodes, alignment and assemble technology has been investigated. A coupling efficiency of over 80% has been achieved for 0.15NA fiber coupled modules with a single emitter laser diode. Alignment tests have been carried out for array laser diodes. It is found that the developed fiber connector suppress the alignment error due to thermal generation under the high power operation. A coupling efficiency of over 60% has been achieved for 0.15NA fiber coupled modules with a 7 array laser diode (a bar with 7 emitters).
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