成果報告書詳細
管理番号20120000000711
タイトル*平成23年度中間年報 ナノテク・先端部材実用化研究開発/革新的な高性能有機トランジスタを用いた薄型ディスプレイ用マトリックスの開発
公開日2012/7/19
報告書年度2011 - 2011
委託先名国立大学法人大阪大学 ヤマナカヒューテック株式会社 地方独立行政法人大阪府立産業技術総合研究所 国立大学法人広島大学 日本化薬株式会社 株式会社クリスタージュ
プロジェクト番号P05023
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:
1. 研究開発の内容及び成果等
本研究開発プロジェクトでは、研究グループ自身で開発している塗布法に適した有機半導体材料の開発、単結晶性の薄膜を作製することによって、高性能の有機トランジスタとアクティブマトリクスを開発することを目的とする。具体的には、新規有機半導体材料において単結晶薄膜の製造方法を最適化・高度化することと、高性能デバイスの構築、及びアクティブマトリックスディスプレイのデモ品開発を、各チーム間で互いに相関させながら並行して行っている。
英文要約Title: Research and Development of Nanodevices for Practical Utilization of Nanotechnology (Nanotech Challenge Program). Development of Transistor Matrices for Flat Panel Displays Using Novel High-Performance Organic Field-Effect Transistors (FY2009-FY2012) FY2011 Annual Report
In the present research program, we are developing high-performance solution-crystallized organic field-effect transistors (OFETs) and active-matrix panels based on our novel OFETs. In FY2011, we have achieved significant progresses in 1) basic consideration of the solution-crystallizing conditions and further enhancement in the transistor performances, 2) fabrication techniques of the transistor arrays and designing the active matrices, and 3) fabrication of liquid-crystalline display panel.1) Selection of organic semiconductor compounds, solvents, and concentration in the solution is investigated to optimize the condition to fabricate the high-performance solution-crystallized OFETs. Among several possibilities in the above selection, the use of C8-BTBT molecules and heptanes for the solution with the concentration of approximately 1 g/L was the best to prepare good-looking homogeneous crystalline films. Also, effect of employing silane self-assembled monolayers is investigated. Good-looking films were grown regardless of the usage, though the device performance was better with the monolayers as a general tendency. The improved methos clearly evidences that our solution-processed films are really single crystalline over the sub -millimeter region of the devices. With the optimized fabrication processes, our state-of-the-art devices show mobility as high as 12 cm2/Vs, which is the highest among all solution-processed OFETs reported so far. In addition, significant improvement in their threshold is realized with the use of acceptor-treatment technique, which we developed ourselves 2) Prototype transistor arrays are prepared with periodically arranged solid structures to initiate the crystal growth, so that the crystalline films grow only at the positions next to the structures.Concomitantly, designing the whole processes of fabricating liquid-crystal displays is underway to demonstrate the performance of our high-mobility OFETs, which exceeds that of amorphous silicon by almost an order of magnitude. The first design has been just developed this month, so that further refinement and device preparation proceeds in parallel.3) Combining the technology of displaying two-dimensional viewgraphs with the liquid-crystalline method, we have fabricated the first high-mobility solution-processed display panel. The result is highly reputed in the nanotech 2012 exhibition.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る