成果報告書詳細
管理番号20120000000758
タイトル*平成23年度中間年報 「低炭素社会を実現する新材料パワー半導体プロジェクト」
公開日2012/7/12
報告書年度2011 - 2011
委託先名技術研究組合次世代パワーエレクトロニクス研究開発機構
プロジェクト番号P10022
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:
1. 研究開発の内容及び成果等
(1) 高品質・大口径SiC 結晶成長技術開発/革新的SiC 結晶成長技術開発
(1)-1 高品質・大口径SiC 結晶成長技術開発
(1)-1-1 高品質・大口径SiC 結晶成長技術開発(その1)
英文要約Title: Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society (FY2011-2012) FY2011 Annual Report
High quality and 6” diameter SiC crystal growth; The low ΔT growth technology that controlled the stress concentration was developed in the growth of 6” diameter RAF seed crystal. For the high-quality ingot mass production, the threading screw dislocation was found to have the inclination tendency along C-plane, leading to the dislocation reduction. To achieve higher quality and lower cost than the sublimation growth method, in the gas supplying growth method, the heat control system necessary for the long continuous boule was introduced. And the possibility of achieving high growth rate compatible with high quality was found by adding chlorine gas. In the solution growth method, the temperature simulation and the void suppression technology were developed and the possibility of drastic reduction of dislocation density was revealed by using the off-angle seed substrate.
Development of processing technology of 6” diameter SiC wafer; In the ingot cutting process, high speed and high tension multi-wire cutting machine was developed and ten wafers in 2” diameter were cut in 60 minutes. In the electric discharge machining method, the multi cutting was also succeeded. In the processes of grinding and polishing, the correlation of the surface roughness and the damaged layer thickness was evaluated for total process construction.
SiC epitaxial film growth technology development; Corresponding to 6” diameter, using the configuration of contacting two 3” wafers, the correlation of the growth parameters to uniformity and the epitaxial film defect density was studied and the effectiveness of lowering of C/Si ratio, etc. was found. To realize the high speed growth of thick epitaxial film, combining the results of gas flow control method with hydrogen chloride adding method, the proof reactor was newly designed.
High voltage switching device technology; The novel device structures of planer and trench MOSFET were studied. The withstand voltage higher than 3.3kV was realized by the test-element-groups evaluation. Using the deposited oxide followed by thermal oxidation as the gate oxide, the possibility of realizing the high reliability compatible with the high channel mobility was found. The hybrid power-module of 1kA class that combined the SiC-SBD of 3.3kV with the Si-IGBT was made and the ON/OFF control of 1250A was achieved.
Evaluation technology development as common basic technology; The prototype of the integrated evaluation system that statistically evaluated the correlation of surface defect and electric characteristic was constructed. Data acquisition began.
Searching activity of application field of SiC technology; The technology bench mark and the review of our target was done. For the application strategy, the renewable energy such as mega solar, wind turbine and geothermal was investigated in addition to EV/HEV and train.
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