成果報告書詳細
管理番号20120000000847
タイトル*平成23年度中間年報 次世代半導体微細加工・評価基盤技術の開発 EUVマスク検査・レジスト材料技術開発
公開日2012/7/11
報告書年度2011 - 2011
委託先名株式会社EUVL基盤開発センター
プロジェクト番号P10025
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:
1. 共同研究の内容及び成果
(1)EUV マスクブランク欠陥検査技術開発
1.開発内容・目標
1)ABI 装置の高度化として、 ABI 装置の高感度化と高スループット化を実現するための高感度欠陥検出モジュールを開発する。 低発塵・低汚染の真空搬送系の開発をおこなう。
2)ABI 装置の欠陥検出効率の向上のための基本検討をおこなう。 プログラム欠陥付きマスクの転写評価および計算機シミュレーションをおこないEUV マスクブランク検査装置に要求される検出性能を明確化する。
3)照明領域をφ100 nm レベルに絞るマイクロCoherent Scatterometry Microscope(μCSM)の開発を兵庫県立大学に再委託し、多層膜欠陥の分析を行う。微小領域照明を実現するフレネルゾーンプレート(FZP)を試作する。
英文要約Title:EUV mask inspection and resist material research (FY2011-FY2013)FY2011Annual Report

EUV mask blank inspection technology
1. The stage system, satisfying the required velocity deviation and positioning stability, was developed. We also developed the blank stage to be used. We reported the optimum structure of fiducial mark for defect mitigation process as a result of our investigation.
2. We improved the detection rate of phase defect with 40 nm width from 95% to more than 99% using newly developed data process. The lithographic impact by phase defect was computationally studied and we found the difference of the impacts between pit and by bump defects. We verified the coincidence of the lithographic impact center and the detection center by ABI of a phase defect. We also analyzed the amplitude defect detection by ABI and confirmed that the bright signal was captured at the edge of the amplitude defect.
3. We fabricated the FZP(Fresnel Zone Plate) to focus the EUV illumination light and achieved the EUV light spot of 200 nm in diameter which will be used as the micro CSM illumination system.
EUV patterned mask inspection technology
1. We set up an EB simulation system to describe the interaction between injecting electrons and the patterns on inspecting EUV mask. Using this system, we verified the advantage of projection EB system in detection of thin film defects down to 2nm thickness on EUVL masks which were difficult to be detected by conventional EB system. We also carried out the algorithmic study on the defect detection for projection EB system.
2. We analyzed the defect images by projection EB system with the EUV masks prepared to obtain the defect specification in hp16nm generation by exposure experiment.
EUV resist material research
1. The first EIDEC standard resist was selected from a series of 200 EUV resist materials evaluated based on targets in resolution limit, line width roughness (LWR), and sensitivity. Moreover, resist material ultimate
resolution limit using high resolution X-dipole illumination condition was investigated. As a result, an ultimate resolution limit of 16nm L/S (lines and spaces) half pitch pattern was achieved.
2. The resist outgassing reference protocol utilizing EUV light has been
established for the reference of electron beam-based protocol. The protocol consists of the following process; EUV light irradiation to resist-coated wafer, outgas generation from the wafer, deposition of contamination film on the witness sample irradiating EB, film thickness measurement by spectroscopic ellipsometory, cleaning the hydro-carbon contaminants, and quantitative analysis of residual components by XPS. The result obtained by the protocol was correlated with that by EB-based protocol.
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