成果報告書詳細
管理番号20120000000776
タイトル*平成23年度中間年報 ナノテク・先端部材実用化研究開発/InGaN系ナノコラム結晶による新世代映像表示デバイスの開拓
公開日2012/9/21
報告書年度2011 - 2011
委託先名セイコーエプソン株式会社 学校法人上智学院
プロジェクト番号P05023
部署名電子・材料・ナノテクノロジー部
和文要約和文要約等以下本編抜粋:
1.研究開発の内容及び成果等
(1)研究開発項目「1 ナノコラム結晶の輝度・効率優位性の検証」
・Tiマスク選択成長法によって、三角格子状にGaNナノコラムを配列させ、規則配列ナノコラムを成長した。このGaNナノコラム上部に、25周期の短周期InGaN/GaN超格子を成長した後に、3ペアのInGaN/GaN多重量子井戸(MQW)を成長し、GaNキャップ層で表面を覆った。
英文要約Title: Research and Development of Nanodevices for Practical Utilization of Nanotechnology. Development of New-generation Projection Display Devices by InGaN-based Nanocolumn Crystals (FY2010-FY2012) FY2011 Annual Report
The development project named "Development of New-generation Projection Display Devices by InGaN-based Nanocolumn Crystals" started in fiscal year 2010. We are aiming to develop the fundamental technology of nanocolumn LED panels for the new method of projection display presented in this project, studying five research subjects, i.e. 1) verification of superiority in emission efficiency of the nanocolumn crystals, 2) green/red-light nanocolumn LEDs, 3) device process technology for nanocolumn LEDs, 4) array process and light emission from nanocolumn LED arrays, and 5) nano-pattern technology for large area nanocolumn LEDs. The interim findings in the fiscal year 2011 are briefly summarized as follows. 1) Photoluminescence (PL) properties of red emission (600-670 nm in wavelength) InGaN-based nanocolumn arrays were investigated. For the 662 nm emission sample, the ratio of room temperature PL integrated intensities to low temperature one was evaluated to be 17.5 %. 2) Using selective area growth (SAG) of rf-plasma assisted molecular beam epitaxy (rf-MBE), triangular lattice GaN nanocolumn arrays were fabricated on patterned GaN templates with the Ti-mask nanohole patterns prepared by improved ICP etching process. The uniform nanocolumn array with 150 um square area included the defect-free 30 um square areas; the variation coefficient of the nanocolumn diameter were evaluated to be 1-2 %. 3) At the top regions of nanocolumn arrays, InGaN/GaN multiple quantum wells (MQWs) were integrated, which emitted visible lights from blue (440 nm in wavelength) to deep red (670 nm) with changing the In compositions. 4) The simplified process of InGaN-based nanocolumn LEDs was developed to evaluate the LED characteristics. A clear rectification property was observed with the turn-on voltage of approximately 3.5 V; the emission is green light at 524 in wavelength and the optical power was 315 uW for the circular emission window of 65 um diameter. 5) To fabricate nanocolumn LED pixel arrays, we developed the basic process technologies for electric isolation of 30-um-pitch nanocolumn pixel, by which the pixel-separation trenches and the electrode patterns of 2 um wiring-width by the trench were fabricated. 6) Two-beam interference lithography was employed to form the 250nm line-and-space patterns on 2-inch substrates, on the 1/4 cut of which GaN nanowall crystals were successfully grown. Nanohole patterns were prepared on the substrate with precise control of exposure direction by the double-exposure two-beam interference lithography.
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