成果報告書詳細
管理番号20120000000539
タイトル*平成23年度中間年報 太陽エネルギー技術開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(産業開発プラットフォームの構築(太陽電池試作ライン))
公開日2012/11/28
報告書年度2011 - 2011
委託先名豊田工業大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
[記載項目]
1. 研究開発の内容及び成果等
1試作ライン構築
試作ラインの構築に関しては、昨年度整備した装置に加え今年度は常圧のAPCVD(大気圧化学気相成長)装置(図1)ならびにスパッタ装置を導入した。APCVD装置により、リンあるいはボロンを含むBSG、PSG、ならびに不純物を含まないNSG膜の堆積を行う。
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells (Installation of Experimental Process line) (FY2010-FY2012) FY2011 Annual Report
(1) Installation of experimental process line: To evaluate newly developed processes and materials, which will be applied to the future solar cell production, a standard crystalline silicon solar cell fabrication line was established. This year, the APCVD equipment for the B doped, P doped and non-doped SiO2 film deposition, which are used for the impurity doping and passivation, and the sputtering system for the thin film deposition for the metallization were installed. The 125 x 125 mm2 or 156 x 156 mm2 size solar cells were produced by using the cleaning, etching, texturing, P diffusion with POCl3, SiN:H thin film plasma deposition, screen printing, firing, and laser p-n isolation processes. One of targets in our project is to realize the thin (<100 μm) silicon wafer solar cell, which can reduce the solar cell cost and improve the conversion efficiency. The single crystal silicon ingot was sliced by using the multi wire cutting method with the impregnated diamond, and the 120μm p-type substrate was obtained. After the damage etching and texturing processes, the n-layer was formed by doping from the phosphorus glass. SiN:H passivation film was deposited by the plasma CVD. For the thin wafer solar cells, a squeegee pressure control system using the air-cylinder was adapted. The pressure was constant independent on the position of the piston of air cylinder, which prevented the wafer breakage during the screen print process. The front side silver and the back side aluminum electrodes were formed by using this screen print technology. One more improvement was to use the calendered mesh screen mask, which allowed the print of a thinner aluminum layer on the wafer. By using these advanced solar cell fabrication technologies, the solar cells with less than 100 μm thickness were produced. (2) Crystal growth and defect analysis: Electrically active defects in multi-crystalline Si, which act as recombination centers, were studied. To analyze the recombination activity, a scanning electron microscope (JEOL, JSM-6510) with the electron beam induced current (EBIC) measurement system was introduced. Recombination centers can be visualized as dark contrast in EBIC image, and the recombination activities can be quantitatively analyzed using the magnitude of induced current. The recombination at grain boundaries in multi-crystalline Si have been analyzed, including twin induced boundaries such as Σ3, 9 and 27a, small angle boundaries and random boundaries. The recombination velocities at small angle boundaries are fast in order magnitude greater than those at other kinds of boundaries. Another introduce one was lifetime measurement system (Sinton Instruments, WCT-120). This can measure injection-dependent minority carrier lifetime both in quasi-steady-state-and transient conditions. By using this system, the passivation quality has been studied, combining with C-V measurement.
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