成果報告書詳細
管理番号20120000000540
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(ソーラーグレード原料シリコンの分析評価に関わる研究開発)
公開日2012/11/28
報告書年度2011 - 2011
委託先名新日本ソーラーシリコン株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
1. 研究開発の内容及び成果等
1.1. 研究開発の内容
NEDO が目標とする2020 年における太陽光発電コスト14 円/kWh を達成するためには全ての太陽電池製造プロセスにおいてプロセスコストの低減を行わなければならない。太陽光発電システム次世代高性能技術の開発コンソーシアムではAll Japan 体制で低コスト・高性能太陽電池の開発を目指している。
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (The development for measuring systems concerning PV grade silicon raw materials and intermediate materials.) (FY2010-FY2012) FY2011 Annual Report
The objective of this study is to reduce costs for producing solar-grade polysilicon to achieve the goals along the national policy on photovoltaic power generation by 2030. In order to reduce production cost of solar-grade silicon, polysilicon reduction processes must be converted to low costs raw materials from high costs raw materials, with the quality maintained. A newly SiCl4 production method from the reaction between silica, carbon and chlorine have been studied for the zinc reduction polysilicon process. The measuring technologies for concentration of impurities and characteristics of raw materials have been studied. ICP-MS, GC-FID, FIA, IC、were introduced in this study. SEM/EDX, TG/DTA were become possible to use. During 2011, the following experiments have been carried out as planned: 1. 41 silica ore samples were collected and measured their compositions by ICP-MS、and analyses their morphologies by SEM/EDX. Glass grade silica ores imported from Australia are pure enough to the starting material for the new silica chlorination method. Purity of domestic silica are lower than imported silica. But using physical and/or chemical refining technologies, the purity of several domestic silica ores could be improved. 2. Compositions of 5 kerf-silicon samples were measured by ICP-MS, and analyses their morphologies by SEM/EDX. Kerf-silicon included several typical metal impurities. Those metal elements were brought to the kerf-silicon from the wafering process in the multi-wire saw. The kerf-silicon also included carbon particles from abrasive grain on the wire, and carbon residues from coolant. Impurities of metal elements can be removed by the acid leaching process. But the carbon removing process must be developed, if the kerf-silicon will be recycle to the raw material in the photovoltaic silicon crystallization processes. 3.While distillation of SiCl4 produced by the new chlorination method, fractions were gathered properly, and measured methyl-chlorosilane compositions by GC-FID. TMCS included in crude SiCl4 was distributed to light fractions, and DMDS/MTCS/CCl4 were distributed to the bottom fraction at the distillation process. As a result, the purity of the refined SiCl4 was confirmed approximate 7N. The purity of this SiCl4 was preferable level for the raw SiCl4 of zinc reduction polysilicon process.
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