成果報告書詳細
管理番号20120000000561
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(ナノ表面・界面制御による超薄型シリコン・ヘテロ接合太陽電池)
公開日2012/11/28
報告書年度2011 - 2011
委託先名国立大学法人東京工業大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
1. 研究開発の内容及び成果等本研究では、薄型Si ウェハに対する高効率へテロ接合型太陽電池の開発を目的として、5cm/s 以下の低い再結合速度を実現するための裏面パッシベーション膜の技術開発とセル化技術の実証を行う。
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Research on high efficiency very thin Si heterojunction solar cell with nano-level controlled surface and interface ) (FY2010-2012) FY2011 Annual Report, Tokyo Institute of Technology
(1) Development of passivation films: The passivation quality of a-AlO:H strongly depends on the negative fixed charge density at the a-AlO:H/Si interface. We introduced the atomic layer deposition system for the deposition of a-AlO:H layer to control and investigate the interface properties in details. We achieved an effective surface recombination velocity of 3cm/s for ALD a-AlO:H. (2) Development of novel heterojunction solar cells: We found that hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) is very promising for heterojunction solar cells since it has a large bang gap of 2.2 eV and it is indirect semiconductor. To realize the high crystalline volume fraction of nc-3C-SiC:H layer, high hydrogen dilution ratio is required during deposition. However, such condition causes the significant etching damage to the wafer surface. Therefore, a two-step deposition method is used for the deposition of a nc-3C-SiC:H emitter. In this method, an amorphous layer grows at the initial stage with a relatively high deposition rate in the first step, followed by the deposition of nc-3C-SiC as the second step. We fabricated the solar cell with the n-type nc-3C-SiC:H emitter. The solar cell showed an intrinsic efficiency of 19.2% (Voc = 0.710 V, Jsc = 35.2 mA/cm2, FF= 0.725). We also fabricated Si heterojunction solar cells with n-type nc-3C-SiC as an emitter and a-AlO:H as a rear side passivation layer with point contacts. Up to now, we obtained an efficiency of 17.9% (Voc: 640 mV). In addition, solar cells were also fabricated to verify the passivation effect of i-a-SiO:H layers. The structure was Al / Ag / ITO / p-microcrystalline-SiO:H / i-a-SiO:H / n-c-Si / i-a-SiO:H / n-a-Si:H / Ag / Al. For the flat substrate, an efficiency of 20.3 % was achieved.
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