成果報告書詳細
管理番号20120000000784
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/高効率集光型太陽電池セル、モジュール及びシステムの開発(日EU共同開発)/新材料・新構造太陽電池の創製及び評価解析技術の開発(WP1)
公開日2012/11/28
報告書年度2011 - 2011
委託先名豊田工業大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
1. 研究開発の内容及び成果等
サブテーマ1 新材料・新構造太陽電池の創製及び評価解析技術の開発(WP1)
英文要約Title:R&D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) “Ultra-high efficiency concentration photovoltaic’s (CPV) cells, modules and systems (WP1:New materials and device characterization)” (FY2011-FY2012) FY2011 Annual Report
1. III-V-N novel materials: (1) Development of III-V-N tandem cells: Two major N-H stretch vibration modes and one major N-H wagging mode are seen in FT-IR spectra of GaAsN grown by the chemical beam epitaxy. Making correspondences between those stretch and wagging modes proceed the understanding of the structures of N-H complexes. In this work, we verified the directions of the vibrational amplitudes of 2952 cm-1 stretch mode and 960 cm-1 wagging mode orthogonal to each other. The result suggests that the stretch mode at 2952 cm-1 and wagging mode at 961 cm-1 originate from the same N-H bond.: The lifetime of photogenerated electrons and the change of N-H vibrations in GaAsN have been studied by time-resolved IR absorption spectroscopy. By the irradiation, N-H vibtation was changed. The band intensity at 960 cm-1 was decreased in intensity and that of 990 cm-1 was increased. Vibrational frequency is very sensitive to the change of charge density, therefore these results suggest that the vibration of N-H was shifted from 962 to 990 cm-1 by the approach or attachment of photogenerated charge carriers.: (2) Analysis of defect structures of III-V-N novel materials: Structural qualities of GaAsN films grown on GaAs substrates by chemical beam epitaxy were investigated by three-dimensional X-ray reciprocal space mapping technique. In growth direction, asymmetric fringe peaks were observed around GaAsN 004 along [001] direction. This indicated that N atoms were segregated during growth. In in-plane directions, streak peaks were observed only along [110] direction, which indicated that only a-type misfit dislocations were formed at the GaAsN/GaAs interface. These suggested that N atoms prevent formation and/or gliding of b-type misfit dislocations.: 2. III-V on Si structure: (1) Development of III-V on Si tandem structure: The defect formation mechanism in buffer layers is studied to suppress them in GaAs layers by using both in-situ and ex-situ analysis. MBE-XRD system at SPring-8 is used for the growth of the crystal and in-situ analysis. The ex-situ observations such as transmission electron microscope are performed to understand the configuration of defects.: (2) Novel buffer structure for III-V on Si: We have investigated a novel buffer structure to obtain good III-V on Si by using MBE. At first, we have grown various III-V materials on Si (111) substrate to be referenced in the growth condition of good quality InSb films. We could obtain single domain films of InSb and InAs. These results suggested that the existence of In atoms is very effective to prevent generation of rotation twins. Therefore, we tried to grow GaAs with an initial In irradiation. The introduction of In at GaAs/Si interface decreased the percentage of rotation twins compared to the films without In irradiation.
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