成果報告書詳細
管理番号20120000000795
タイトル*平成23年度中間年報 新エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/ポストシリコン超高効率太陽電池の研究開発(広帯域AlGaInN)
公開日2012/11/28
報告書年度2011 - 2011
委託先名国立大学法人名古屋大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
1. 研究開発の内容及び成果等
InGaN は既にLED 電球として大量生産されている。2010 年から2011 年で8 インチ4 枚程度の大型MOVPE 設備が世界で1000 台以上生産され、既に本格稼働が始まっている。全装置を合わせると2000 台以上である。更にSi 基板上への成長も可能であり、実際、Si の分野としては最先端では無い6 インチ或いは8 インチ程度の大きさの基板のプロセス設備を用いてLED の試作も行われている。
英文要約Title:R&D on innovative Solar Cells Post-silicon solar cells for ultra-high efficiencies (wide bandgap AlGaInN) (FY2010-FY2012) FY2011 Annual Report
(1) InGaN-based photovoltaic (PV) cells using dual superlattice InGaN/GaN superlattice with 3 nm thick barrier layer is effective to suppress glide of the misfit dislocation generated at the interface between underlying GaN and the superlattice, although short circuit current density decreases due to the carrier confinement effect. In comparison, it is effective to use superlattice with 1.6 nm thick barrier layer for the increase of short circuit current density because of the mini-band formation. However, glide of the misfit dislocation cannot be suppressed in case of thin barrier layer. Therefore, we stacked two different superlattices. One is the Si-doped superlattice with thick barrier layer for suppression of gilde of the misfit dislocation. Second superlattice has thin barrier layer for the improvement of the short circuit current density. By using dual superlattice structures with In0.17Ga0.83N well layers, we demonstrated high external quantum efficiency and reasonable conversion efficiency of 2.8% under AM1.5G and 1.55 sun condition. Also, we demonstrated conversion efficiency as high as 3.4% under AM1.5G and concentrated 200 sun conditions. (2)Non polar PV cells In case of conventional p on n structure on +c-plane GaN templates, reverse field is generated in the InGaN layer by the piezoelectric effect which degrades the performance of the PV cell. Therefore, we tried a-plane structure on r-plane sapphire substrate. Although the open circuit voltage is low due to the decrease of shunt resistance caused by the poor crystalline quality and plenty of leakage pass, short circuit current density is increased by 60% compared with conventional +c plane PV cell having the same In content InGaN. (3) Effect of ITO electrodes Transparent ITO is used as the p-electrode substituting conventional Ni/Au grid electrode. Transparent loss is decreased 11% and external quantum efficiency increased 10%.
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