成果報告書詳細
管理番号20120000000549
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(革新的太陽電池用単結晶成長法の研究開発)
公開日2012/12/26
報告書年度2011-2011
委託先名国立大学法人九州大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
1. 研究開発の内容及び成果等
1 高効率単結晶育成炉の温度分布解析シミュレータ構築
インゴット全面にわたって単結晶育成可能な結晶育成炉の温度分布解析用シミュレータの構築をおこなう。すなわち、インゴット全面にわたって単結晶育成が可能で、しかも種結晶を融解することなく確実に種結晶として保持することが可能な温度分布を有する単結晶育成炉の設計が可能なシミュレータの構築を行う。
英文要約Title: Solar energy Technology research and development: Development of High technology in next generation for Solar energy system: Research and development of Crystalline silicon solar cells: Development of growth method of silicon single crystals (FY2010-FY2012) FY2011 Annual Report
The project mainly focuses on the development of crystallization process of silicon single crystal for PVs using a directional solidification method. Several papers on crystallization silicon single crystals have been reported from BP solar and other groups so far. They reported that quality at a periphery is degraded due to undesired crystallization of poly at this area. At the second stage of this project, we have developed to overcome the problem of the formation of such undesired growth. To satisfy the requirement, we designed a new furnace by using a newly developed code for the prediction of crystallization process of silicon using directional solidification process. The code includes crystallization and cooling process of silicon. The calculation result indicated that design of heating system is extremely important to avoid the problem. Furthermore, the control of dislocation density and residual stress distribution is also important to improve efficiency of solar cells. Experimental results of a crystal grown by NIMS and Toyota Institute of Technology show that residual stress and dislocation density can be reduced by our newly developed cooling process. The process was already submitted as a patent to the government office.
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