成果報告書詳細
管理番号20120000000551
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(太陽電池用低価格単結晶シリコン成長法の研究開発)
公開日2012/12/26
報告書年度2011-2011
委託先名独立行政法人物質・材料研究機構
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等
1 実験炉を用いたSeed cast法の予備実験
Seedの必要サイズ等の検討と、Seedが溶解しない成長条件の最適化(Seeding技術の確立)が必要である
英文要約Title : Crystal Growth for Low Cost Si Single Crystals for Photovoltaic (FY2010-FY2012) FY2011 Annual Report
Crystal Si is the most prevailed material for solar cell application. At present stage, it is necessary to improve crystal Si technology to increase efficiency and reduce cost of Si solar cells. We have been trying to develop the new crystal Si growth technology to achieve this social demand. In this project, we have been performing advanced cast method for growing mono crystal Si for solar cells. This year, we have tried. (1) to establish the seed cast growth with laboratory size furnace. And (2) to fabricate the demonstration furnace cooperating with the Kyushu University group. (1) Seed cast growth with laboratory size furnace. 1-1) Grow high quality mono cast ingots. By attaching gas flow machine, we have grown mono cast Si ingot of better surface quality. The carbon concentration was measured as 3 x 1016 cm-3. 1-2) Seed cast growth. We have succeeded in the seed cast Si growth. Fig. 3 shows the photograph of vertical cross section. Large single crystal was grown with this method. (2) Fabricate the demonstration furnace. The demonstration furnace for 50 cm square (9 rods) ingot was fabricated. The conventional cast ingot of 50 x 50 x 20 cm^3 has been successfully grown by this furnace. The inner part of the furnace are now going to be customized to prove our design is essential to realize mono cast Si growth.
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