成果報告書詳細
管理番号20120000000566
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(次世代超薄型高効率結晶シリコン太陽電池)
公開日2012/12/26
報告書年度2011-2011
委託先名京セラ株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
結晶シリコン太陽電池セル変換効率20%、モジュールでの変動効率18%を達成する。
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (super thin high efficiency crystal silicon photovoltaic) (FY2011-FY2012) FY2011 annual report. Kyocera Corporation.
[Objective in FY 2013] We aim to achieve crystalline silicon photovoltaic cell conversion efficiency 20%, module conversion efficiency 18%. (1)policy of research and development; We have to reduce the photovoltaic power generation cost to 7YEN/kWh to realize the road map of photovoltaic power generation cost for 2030. In the development of super-thin high efficiency photovoltaic process, we aim to achieve the high conversion efficiency of the world's best level by using the super thin wafer and achieving the technical development about electrode formation technology, new light trapping technology, effective passivation technology, p-n junction formation technology and back-contact structure with low cost process. 1. high efficiency technology development: (FY2011-FY2013 policies) We perform the development for the technology to reduce the cell-warp which is the problem with the BSF layer formation method by using the conventional aluminum paste and to achieve the technical development about electrode formation technology, new light trapping technology with low cost process (dry/wet and laser), effective passivation technology, p-n junction formation technology and back-contacted structure. Furthermore, we develop the new structure and process to achieve the low surface recombination velocity with super thin cell. (FY2012 policy) We perform the development for the technology to achieve the technical development about the new structure to achieve the low surface recombination velocity with low cost process . 2. Evaluation of the materials provided from the sub-theme for research and development of the low cost poly silicon raw materials and quasi-mono crystalline silicon wafer: (FY2012 policy) We evaluate the sample wafers provided from the sub-theme for research and development of the low cost poly silicon raw materials and quasi-mono crystalline silicon wafer which research and develop about the low cost poly silicon raw material and the high quality multicrystalline or low cost quasi-monocrystalline silicon ingot growth technology, for the example, low cost floating cast growth method, low cost EMC monocrystalline growth method, and other low cost monocrystalline silicon growth method. We evaluate such materials by our standard cell process. (2)FY2012 results; 1. High efficiency technology development: We are carrying out the improvement and the elementally technology development such as the study for materials and interface control method for back side structure. We got the following result in this fiscal year. Jsc=37.0mA/cm2, Voc=0.632V, F.F.=0.780, Eff.=18.3% using 180 micron thick multicrystalline silicon wafer with standard cell structure (non back-contacted structure). By this method, we confirmed the improvement of the external quantum efficiency for the long wave length side together. In FY2013, We will perform element technology development about electrode formation technology, p-n junction formation technology, and back side passivation technology sequentially. 2. Evaluation of the materials provided from the sub-theme for research and development of the low cost poly silicon raw materials and quasi-mono crystalline silicon wafer: Because there was no sample offered to evaluate, there is no result of evaluation.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る