成果報告書詳細
管理番号20120000000567
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(産業開発プラットフォームの構築(物性評価)
公開日2012/12/26
報告書年度2011-2011
委託先名学校法人明治大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1. 1. 研究開発の内容及び成果等
1 原料・結晶の評価
太陽電池作製用Si原料中に残留するPドナー、Bアクセプタの濃度を、低温フォトルミネッセンス(PL)分光法により1x1014-1x1017 cm-3の範囲で定量することに成功した。
英文要約Title:High Performance PV Generation System for the Future R and D on Ultimate Wafer-based Si Solar Cells. (Common industrial platform (material evaluation)) (FY2010-FY2012) FY2011 Annual Report
We are establishing the common industrial platform. The project can be categorized into following three areas, i.e. the evaluation platforms for 1) low cost and high performance multi-crystalline substrates, 2) low cost single crystalline substrates, and 3) high performance cell processes. 1) For the low cost and high performance multi-crystalline substrates, the PL method for quantification of donor and acceptor impurities in electronic-grade Si has been standardized in the range 5 x 10E10 to 1 x 10E15 cm-3. We improved the technique by raising the sample temperature to enhance the free exciton line, leading to the extension of the calibration curves up to 1E17 cm-3. Satisfactory agreement was obtained among the present PL method, secondary ion mass spectroscopy and inductively coupled plasma mass spectroscopy in the quantification of B and P impurities in solar-grade Si. Deep-level PL denoted D-lines at low temperatures have been studied in depth in relation to dislocations and oxygen precipitates in electronic Si. PL topography has revealed the distribution of dislocation clusters forming small-angle grain boundaries and their microscopic oxygen-precipitation behavior. 2) We evaluated the correlation between the generation of crystalline defects and C incorporation in quasi-single crystalline silicon ingots grown by unidirectional solidification technique with a seed. The light element incorporation could be suppressed by atmosphere control. The etch pit densities were well correlated with the interstitial carbon densities. The precipitate density consisted of C, N, and Si increased along the growth direction in the ingot fabricated without atmosphere control. After the precipitation, small-angle grain boundaries (SA-GBs) were generated. We consider that the precipitations were the origin of SA-GBs, therefore the crystalline defect density can be decreased by reducing the incorporation of C impurities during the crystal growth. 3) For the high performance cell processes, we propose ion shower doping technique as new process to fabricate selective emitter structure solar cells. This technique provides large beam area and therefore high through-put compared with laser doping and ion implantation. It was confirmed the good electrical properties with uniform conversion efficiency in the wafers. There were no doping damage and contamination observed. We believe that ion shower doping technique is useful to form emitter layer as well as selective emitter parts. We also evaluated new crystalline defect characterization apparatus to clarify crystalline quality, especially for single crystalline substrate, and cell performance by measuring the distribution of crystalline defects induced by the cell fabrication processes and categorizing them.
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