成果報告書詳細
管理番号20120000000791
タイトル*平成23年度中間年報 新エネルギー技術研究開発/革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)/ポストシリコン超高効率太陽電池の研究開発(ナローバンドギャップ太陽電池)
公開日2012/12/4
報告書年度2011-2011
委託先名兵庫県立大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:
1~ 1 はじめに
太陽電池を普及させる為には低コスト化が必須であり、真空系装置を用いない化合物系太陽電池の作製に期待が寄せられている。そこで我々は、非真空プロセスの中でも、シンプルで安価な製膜方法として、印刷法およびスプレー熱分解(Spray Pyrolysis Deposition: SPD)法を用い、化合物半導体太陽電池を作製した。
英文要約Title:Research and Development on Innovative Solar Cells Research and Development on Ultra High-Efficiency Post-Silicon Solar Cells (Narrow Band-Gap Solar Cells) (FY2008-FY2012) FY2011 Annual Report
Cu2ZnSnS4 (CZTS) nanoparticles were synthesized by hot-injection method. The precursors were used for synthesizing the CZTS nanoparticles including copper (II) acetylacetonate, zinc(II) acetylacetonate, tin(IV) acetylacetonate, sulfur element, and oleylamine solvent. The CZTS nanoparticles were synthesized at 230C degree. The particle size of CZTS nanoparticles obtained was around 10 nm. The structure of CZTS solar cells is Mo/CZTS/Inx(OH)ySz/ZnO/Al-doped ZnO. CZTS nanoparticles were printed on Mo by doctor-blade. After coating on Mo substrate, CZTS layers were annealed in H2S or Se vapor to convert into high dense films. CZTS solar cells with annealing in H2S ambient showed a conversion efficiency of 1.12 %, Voc=0.59 V and Jsc=4.80 mA/cm2. For the sample annealed under Se vapor ambient, the band gap of CZTSSe is around 0.91 eV, the conversion efficiency, open-circuit voltage and short-circuit photocurrent density are 0.86 %, 0.32 V and 9.3 mA/cm2, respectively. CuInS2 (CIS) nanoparticles were synthesized by hot-injection method. CuCl2, InCl3 and sulfur element were used as precursor. The nanoparticles were obtained with the particle size of 4-12 nm. CIS solar cell device is Mo/CIS/Inx(OH)ySz/Al-ZnO. The conversion efficiency for this kind of solar cells is around 0.42%. CuIn(Ga)S(Se)2 (CIGSSe) nanoparticles synthesized are similar CZTS. In this case, Ga precursor is gallium(III) acetylacetonate. The CIGSSe nanoparticles were synthesized at 200, 230 and 285C degree. The particle size of CIGSSe nanoparticles is below 14 nm. The band gap for CIGSSe nanoparticles is around 1.42 eV. The structure of CIGSSe solar cells is Mo/CIGSSe/Inx(OH)ySz(CdS)/ZnO/Al-doped ZnO. The CIGSSe films were selenized in a graphite box at 500 oC for 20 min. The best efficiency of this solar cells obtained is 1.7 %. Short-circuit photocurrent density and open-circuit voltage are 16 mA/cm2 and 0.32 V, respectively. The band gaps of Cu2Te and Sb2Te3 are around 0.81 eV and 0.28 eV, respectively. In order to obtain the band gap of 0.6-0.7 eV, we mixed Cu2Te and Sb2Te2 together and then annealing in N2 ambient. Cu2Te and Sb2Te3 powders were synthesized by ball-milling method. However, the band gap of the mixture of powders after annealing could not confirmed from absorbance measurement.
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