成果報告書詳細
管理番号20130000000122
タイトル*平成24年度中間年報 省エネルギー革新技術開発事業 先導研究 グリーン光リンク技術のための低消費電力面発光レーザアレイの研究開発
公開日2013/4/27
報告書年度2012 - 2012
委託先名国立大学法人東京工業大学 古河電気工業株式会社 富士ゼロックス株式会社
プロジェクト番号P09015
部署名省エネルギー部
和文要約
英文要約Title: Developments of Low Power Consumption VCSEL Arrays for Green Optical Link Technologies (FY2011-2013) FY2012 Annual Report
1) Development of the 1060nm VCSELs with the Low Power Consumption for the Super-Computer (Furukawa Electric.)
The final goal of this research is to develop the 25Gbpsx4ch VCSEL array with both low power consumption and high reliability for the application to high-speed and high-volume optical links used in super-computers and dater centers. The basic design of 25Gbps VCSEL was done by using the numerical simulation and VCSELs were fabricated based on the design. We measured the 25Gbps eye pattern with a bias current of 6mA. The power consumption with 25Gbps operation was calculated to be 9.3mW, that is, 0.37mW/Gbps, which is lower than our goal (0.4mW/Gbps). We also obtained 25Gbpsx4ch eye patterns at 70oC. The 25Gbps clear eye openings were confirmed. We achieved the target of this year for both low power consumption and 25Gbps operation at 70oC.
2) Development of low consumption 850 nm wavelength VCSELs. (Fuji Xerox Corp.)
A strained quantum well (QW) improves lasing performances due to energy band gap alterations. We introduced InGaAs or InAlGaAs strained QW in an 850nm VCSEL instead of a conventional lattice-matched GaAs QW for low power dissipation. We fabricated 3.4-nm-thick In0.117GaAs 3QW and 7.0-nm-thick In0.10Al0.08GaAs 3QW VCSEL. We measured the 3dB modulation bandwidth at bias current of 1.5mA at room temperature. The bandwidth of GaAs, InGaAs and InAlGaAs QW VCSELs are 7.8 GHz, 9.5 GHz and 9.4 GHz, respectively. We also measured a 10 Gbps eye-diagram of these VCSELs at bias current of 1.5 mA at room temperature. The input non-return-zero signal was 10.3125 Gbps of psedo random bit sequence patterns. There is no mask hit of 10 Gigabit Ethernet with eye-patterns of InGaAs and InAlGaAs QW VCSELs, while there is large mask hit with an eye-pattern of GaAs QW VCSEL. The energy efficiency of both strained QWs VCSELs are as low as 0.26 mW/Gbps.
3) Establishment of long-term low power consumption VCSEL technologies (Tokyo Institute of Technology)
The establishment of the carrier confinement technology using a quantum structure intermixing (QSI) is one of our final goals. In this year, the QSI-VCSEL using the sputtering SiO2 was fabricated, and a threshold current of less than 1mA was obtained. To improve the device fabrication process, the spin-on-glass (SOG) was utilized to form a SiO2 layer. The process will be applied to the fabrication of the small-sized VCSELs. Another target is to realize a laterally integrated InGaAs VCSEL/ electro-absorption modulator chip for higher modulation bandwidth and lower power consumption. We fabricated a solitary slow light modulator. We obtained a record low modulator voltage of below 0.5 V for an extinction ratio of 5dB. An integrated chip was also fabricated. The threshold is 0.9mA. The output could be modulated by applying a voltage in the modulator section.
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