成果報告書詳細
管理番号20130000000395
タイトル*平成24年度中間年報 次世代素材等レーザー加工技術開発プロジェクト 次世代レーザー加工技術の研究開発(3)
公開日2013/5/31
報告書年度2012 - 2012
委託先名浜松ホトニクス株式会社
プロジェクト番号P10006
部署名技術開発推進部
和文要約
英文要約1. High power semiconductor laser technology
We have developed 9xx-nm edge-emitting single-emitter laser diodes and laser diode arrays by focusing on the output power, the efficiency and the reliability. In the previous financial year, an output power of 15 W and a power conversion efficiency of over 60% from the single-emitter laser diodes, and an output power of 200 W and a power conversion efficiency of over 50% from the laser diode arrays were achieved, respectively. In this financial year, we have developed the technique for preventing facet degradation under the high power operation of laser diodes. The life-times of the single-emitter laser diodes and the laser diode arrays have been estimated to be more than 20,000 hours, respectively. A peak output power of over 200 W has been obtained from a vertical-cavity surface emitting laser diode array with ion implanted isolated current apertures.
 
2. Fiber coupling technology
A coupling efficiency of over 80% was achieved for 0.15NA fiber coupled modules with a single emitter laser diode in the last financial year. In this financial year, the alignment and assemble technologies have been investigated for the laser diode array. It is found that the developed fiber connector technology is effective to high power fiber coupled assembly of the laser diode array. A coupling efficiency of over 60% has been achieved for 0.15NA fiber coupled modules.
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