成果報告書詳細
管理番号20120000001183
タイトル*平成23年度中間年報 太陽光発電システム次世代高性能技術の開発 フレキシブルCIGS太陽電池モジュールの高効率化研究(結晶欠陥の検出・同定、欠陥低減化技術開発支援)
公開日2013/6/25
報告書年度2011 - 2011
委託先名筑波大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance flexible CIGS PV modules

The goal is to demonstrate high performance CIGS solar cells with the conversion efficiency of more than 22%. To achieve the goal, detection and identification of defects in CIGS has been carried out, especially formation of Cu2Se in CIGS was found in 2010. Generally the stoichiometry of Cu2Se is deviated to Cu deficiency and shows high carrier concentration in the order of 1021 cm-3 with the band-gap energy of around 1.2eV. So the Cu2Se in CIGS may act as recombination center and derive low parallel resistance in solar cells. One of the reasons for the degradation of solar cell performance in higher Ga content of CIGS may be the formation of Cu2Se. The cause of the formation of Cu2Se was studied in this year. Oxidation is considered as one of the causes for the formation of Cu2Se in CIGS from the chemical reaction like below. CuGaSe2 + O2 → Ga2O3 + Cu2Se. After intentional oxidation of CIGS, the Raman peak at 260cm-1 which is related with Cu2Se was enhanced and the Raman peak became weak by subsequent KCN treatment. Such result indicates that one of the causes for the Cu2Se formation is oxidation. The source of oxygen was studied by changing substrates. It was found that the oxygen concentration is lower in CIGS on Ti substrates than those on glass substrates and is higher with increasing Ga content of CIGS. It is necessary to find suitable substrates replacing soda lime glass.
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