成果報告書詳細
管理番号20120000001185
タイトル*平成23年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 次世代多接合薄膜シリコン太陽電池の産学官協力体制による研究開発
公開日2013/6/25
報告書年度2011 - 2011
委託先名太陽光発電技術研究組合
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research & Development for Multi-junction Thin-film Silicon Solar Cells for the future by the Consortium composed of Industry, Government and Academia

For the efficiency improvement and the cost reduction of thin-film-silicon solar modules, the researches and developments (R&D) for “high-efficiency technologies of multi-junction thin-film-silicon solar cells”, “deposition technologies of thin-film-silicon solar cells for large-area and high-productivity”, and “system technologies by thin-film-silicon solar modules” have been performed by the consortium consisting of 1 national institute and 6 companies and by the collaboration with 6 universities.

The R&D target for the high-efficiency technologies of multi-junction thin-film-silicon solar cells is the development of component technologies for 13% stable efficiency on 30 x 40 cm2 -size modules. We reported that the triode-deposition a-Si:H films led the 9.6% stable efficiency (1cm2 area) of the a-Si:H single junction solar cell on a commercial TCO/glass substrate in the last fiscal year. In this fiscal year, a-Si:H/μc-Si:H tandem solar cells have been developed, and 11.7% stable efficiency (1cm2 area) has been achieved on a commercial TCO/glass substrate by applying the triode-deposition technique to top a-Si:H i-layer and by using a SiOx alloy for intermediate-layer and bottom n-layer. Furthermore, by using a textured LPCVD ZnO film deposited on a textured glass substrate fabricated by RIE etching for a front electrode, 9.6% stable efficiency of the a-Si:H single junction solar cell has been achieved without the use of triode-deposition technique. Further improvements of stabilized efficiency is undertaken by employing these silicon deposition and light-trapping techniques and other developing technologies of sputter-/LPCVD-ZnO films, a-/μc-SiGe:H materials, minimized presence of a-Si:H nanoparticle in deposition and so on.

The R&D main targets for the deposition technologies of thin-film-silicon solar cells for large-area and high-productivity are as follows;
‧ Development of novel VHF (≧60MHz) plasma sources with uniformity of plasma parameters within ±10% in an area with the length >λ/4 and the width >λ/10 ( λ: wavelength corresponding to plasma frequency) under plasma conditions which are applicable to the deposition rate of μc-Si:H >1.5nm/sec.
‧ Development of large-area deposition process by using the G5-size-substrate available PECVD machine with multi-rod type electrodes, especially to achieve thickness distribution of μc-Si:H films within ±10% in G5-size area.

In this fiscal year, two PECVD systems have been installed for the investigation of two types of novel VHF plasma source, and one of those succeeded to propagate VHF plasmas without any standing waves in 2.2 m length at an excitation frequency of 60 MHz. Concerning the development of large-area deposition process, the thickness distributions of ±15% (±11.8% in a range of 2σ) and ±11% have been achieved for μc-Si:H films and a-SiGe:H films, respectively. In order to promote the development of novel VHF plasma sources and large-area deposition process, a diagnostic method for the evaluation of H and H* density in SiH4/H2 plasmas, investigation methods at device interface and film properties, and a non-destructive and large-scalable evaluation method of defect density in silicon films by using photothermal radiation spectroscopy have also been developed.
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