成果報告書詳細
管理番号20130000000114
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 フレキシブルCIGS太陽電池モジュールの高効率化研究
公開日2013/6/25
報告書年度2012 - 2012
委託先名富士フイルム株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title : High performance PV generation system for the future / The development of high performance flexible CIGS PV modules

Our objectives are to establish methods for manufacturing high efficiency flexible CIGS solar modules. We use novel structure metal foil substrates with an insulating layer. The substrates have a capability to offer flexible and high efficiency integrated CIGS modules.
I. Fabrication of high efficiency flexible CIGS sub-modules. (FUJIFILM)
(1) Technology for CIGS sub-module production using roll-to-roll process.
FUJIFILM and ULVAC are collaborating to develop a pilot line facility for CIGS solar technologies. Our current pilot-line offering allows for roll-to-roll deposition on Metal substrates at 0.3m widths. The composition ratio of Cu/(Ga+In), which has a great influence on the performance of the solar cell, was distributed at ± 6% in an area of 30 cm x 30cm, indicating an almost uniform composition. The solar cell with the CIGS film prepared by the roll-to-roll process shows an efficiency of 13.6 %.
(2) Fabrication of CIGS solar cells without using CdS films.
Development of solar cells without using CdS film was conducted. Our Cd-free cell showed 17.4% efficiency (Voc=0.68V,Jsc=34.5mA/cm2,FF=0.74) without an antireflective coating. This efficency was comparable to that of a solar cell fabricated with a CdS film for a buffer layer.
II. Technologies for high efficiency flexible CIGS solar cells. (AIST)
Key technologies which can lead to the improvements in CIGS flexible solar cell and submodule performances have been investigated.
We have succeeded in making high-efficiency integrated CIGS submodules whose conversion efficiency is 17.1 % with AR coating on soda-lime glass. The key technology which enables the achievement is the optimization of both electrical and optical properties of the transparent conducting oxides (TCOs) which are used for the window layers of devices. The aperture area of the device is 4 cm2, and the solar cell properties of the device are Voc = 0.771 V/cell, Jsc = 30.13 mA/cm2, and FF = 0.787.
We also have succeeded in making high-efficiency CIGS solar cells whose conversion efficiency is 19.8 % with AR coating. The key technologies which enable the achievement are both the control of Ga/III composition ratio in CIGS layers and CIGS deposition temperature. As the results, we have found that the optimum Ga/III composition ratio is about 0.47 and the optimum CIGS deposition temperature is about 570 C. The solar cell properties of the best CIGS solar cell (19.8 % efficiency) are Voc = 0.76 V, Jsc = 33.3 mA/cm2, and FF = 0.779.
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