成果報告書詳細
管理番号20130000000135
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)低倍率集光型薄膜フルスペクトル太陽電池の研究開発(サブセル界面接合技術)
公開日2013/6/25
報告書年度2012 - 2012
委託先名三菱電機株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Thin Film Full Spectrum Solar Cells with Low Concentration Ratios (Multi-cell interface junction) (FY 2008 - FY 2014) FY 2012 Annual Report

 The purpose of our research is to develop a low resistance tunnel recombination junction between the subcells in thin film full spectrum solar cells. To achieve this purpose, we are focusing on (a) characterization techniques for the accurate measurement of junction resistance, (b) fabrication technologies for the junction optimized for thin film silicon tandem solar cells.
 Recently, we designed novel transparent conductive oxide (TCO) based tunnel recombination junction for low junction resistance and high transparency. The concept of the TCO junction is based on a reduction in bandgap at the subcell interface.
 In the present study, we successfully developed a p-NiO/n-InZnO tunnel recombination junction with extremely low resistance of 80 milli-ohm cm2 for thin film silicon solar cells by using the following findings. First, the n/p TCO junctions were improved by using nitrogen gas as an alternative to oxygen gas during the TCO deposition process of reactive sputtering. Second, our newly proposed n-Si/p-TCO/n-TCO/p-Si (n/p/n/p) junction achieved significant reduction in the junction resistance compared to the previous junction consisting of n-Si/n-TCO/p-TCO/p-Si (n/n/p/p).
 We have also demonstrated an improvement in the fill factor of an amorphous Si/microcrystalline Si solar cell at 5 suns by inserting our TCO junction into the interface between the subcells. Series resistance (Rs) of the cells exhibited a direct correlation with the measured junction resistances, indicating that our junction actually contributed to the reduction of Rs.
 These results proved the feasibility of our junction technologies for thin film silicon solar cells.
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