成果報告書詳細
管理番号20130000000150
タイトル*平成22年度中間年報 新エネルギーベンチャー技術革新事業 新エネルギーベンチャー技術革新事業(太陽光発電) 低コスト薄膜太陽電池用SiおよびSiNx薄膜の革新的低温作製技術の開発
公開日2013/6/22
報告書年度2010 - 2010
委託先名気相成長株式会社 国立大学法人北見工業大学 株式会社フィルテック
プロジェクト番号P10020
部署名技術開発推進部
和文要約
英文要約Title: New Energy Venture Business Technology Innovation Program/ New Energy Venture Business Technology Innovation Program (Photovoltaic Power Generation)/Development of reformative low temperature making technology of Si and SiNx thin film for low-cost thin-film solar cell (FY2010-FY2011) FY2010 Annual Report

Content and outline of result of research and development

Basic verification of efficient film deposition
Hot-wall CVD equipment was designed and produced based on the design, and the specification was achieved. The thermal gradient where the deposition mechanism clarification was possible was able to be produced. As for t-BuSiH3, the film was able to be done at low temperature 350 degrees Celsius The reaction of t-BuSiH3 and EtN3 was confirmed. So the prospect that the film was able to be done at the low temperature attached by using the radical in the future.

Production and development of CVD precursor
We were able surely to achieve targeted value \1,000-/g. Identification and the purity of the compound was confirmed. We selected next route.
Si(OEt)4 -> t-BuSi(OEt)3 -> t-BuSiCl3 -> t-BuSiH3
〔Results〕
Si(OEt)4 -> t-BuSi(OEt)3: yield:60%, NMR: 99%, t-BuSi(OEt)3 -> t-BuSiCl3: yield: 80%, NMR: 99%
t-BuSiCl3 -> t-BuSiH3: yield: yield: 64%, NMR: 99%
It was found that t-BuSiH3 was stable precursors in air. By using HB-CVD equipment with t-BuSiH3, we could deposit Si film on glass wafer safly.
EtN3 was synthesized by the following reactive type.
〔EtX + MN3〕. Yield: 40%

It was found that t-BuSiH3 was stable precursors in air and impact.
We measured the vapor pressure of t-BuSiH3 and EtN3. Both precursors had enough vapor pressure to film formation on large area wafers. t-BuSiH3:760 torr/26 degrees Celsius, EtN3:760 torr/49 degrees Celsius.

Development of film deposition process
Radiant heat evasion mechanism was studied and radical generation tool was produced. It found that the tool function worked enough and be able to control radical. Si and SiNx film was deposited using this radical tool. We were able to change the optical constant and film composition.
New concept Ri-cat-CVD equipment was designed.
Device specification
Range of temperature of heating nitrogen room: RT-600 degrees Celsius
Film 5cm in width
With substrate slide mechanism
Supply system 〔heating nitrogen, precursors, introduction of radical〕
There is no direct substrate heating
We designed that was able to be made a tool configuration in the vacuum at a low-pressure level at a low price without assuming the high-vacuum system.

Decision of business plan
Needs were the Si crystal solar batteries in case of the marketing research. It has been understood that a technical problem is passivation revitalization of the SiN film. A new deposition method of SiNx and the demand for the new concept CVD tool are high. It is judged that answering this market trend is a radical generation method, HB-CVD, and has a big business opportunity here.
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