成果報告書詳細
管理番号20130000000204
タイトル*平成22年度中間年報 SBIR技術革新事業 デジタルLSI免疫センサーによる極微量有害物質測定装置の研究開発
公開日2013/6/22
報告書年度2010 - 2010
委託先名京都電子工業株式会社 株式会社バイオエックス 京都府公立大学法人京都府立大学
プロジェクト番号P08015
部署名技術開発推進部
和文要約
英文要約Title: Technology Innovation Program for Small Business Innovation Research (SBIR) / The Development of an Ion Sensing Field Effect Transistor (ISFET) based biosensor for the detection of trace levels of harmful substances (FY2010-FY2011) FY2010 Annual Report

We developed a novel Ion Sensing Field Effect Transistor (ISFET) sensor and optimized the conditions of enzymes, substrates and buffers for the sensor. The ISFET sensor system combined with the immunoassay exhibited extremely high sensitivity for PCB (Kanechlor 400) in the concentration range of 5 ng/ml to 500 ng/ml. For the application of ISFET sensor to analysis of explosive compounds, we prepared anti-nitroaryl derivative antibodies. Five nitroaryl derivatives were synthesized and their nitroaryl-BSA conjugates were employed to immunize BALB/c mice. We demonstrated the feasibility of novel monoclonal antibodies by indirect competitive ELISA and kinetic exclusion assay with mice antisera.
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