成果報告書詳細
管理番号20130000000222
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(ヘテロ接合デバイス化-低ダメージ成膜)
公開日2013/6/22
報告書年度2012 - 2012
委託先名京セラ株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research and Development of Thin Film Multi-Junction Solar Cells with Highly Ordered Structures (Hetero-junction device - Low Damage Deposition) (FY2008-2014) FY2012 Annual Report

[Objective in FY2013] We aim to achieve η=9% and Voc=0.3V on the bottom cell in triple junction thin film solar cell with single crystalline wafer of narrow band-gap materials(≦0.9eV)such as SiGe, SiGeSn. Our final target is η≧20% as a triple junction solar cell by introducing this bottom cell.(1)Evaluation of surface treatment method for narrow band-gap material.Diluted HF treatment is a conventional method to remove the surface oxide layer and hydrogen terminate on Si crystalline substrate. But it is not enough to remove the surface oxide layer on Ge crystalline substrate. We perform the evaluation of mono-crystalline Ge substrate treatment method, and are able to get the water repellency of it by using highly-concentrated hydrochloric acid dipping process in addition to conventional diluted HF treatment. We confirm increase of the minority carrier life time (micro-PCD measurement) with the Ge substrate which formed a-Si layer on the both sides by this process in comparison diluted HF treatment only.(2)Evaluation of hetero-junction formation on narrow band-gap material.We perform the development to form the high quality hetero-junction on Ge substrate, by high pressure and low power density deposition a-Si layer using PCVD and vacuum anneal process. As a result, we get around 200usec as effective minority carrier life time, and approximately 30cm/sec as calculated surface recombination velocity with the Ge substrate which formed a-Si layer on the both sides.(3)Evaluation of hetero-junction solar cell.We perform the evaluation of hetero-junction solar cell manufactured on low resistibility Ge substrate. As a result, we do not achieve our aim (Voc >0.3v) in this fiscal year, but we find an ability of high Voc with hetero-junction solar cell using narrow band-gap material. On the other hand, photo current decreasing in long wavelength is observed from EQE measurement. It is caused by a reflection with the a-Si layer, and we need to apply other anti reflection technique, for example W-AR or surface texture formation, to our cells from now on. In addition, we carry out EL (electro luminescence) measurement of hetero-junction Ge solar cells by liquid nitrogen cooling InGaAs image sensor system (by ITES corporation). It is able to observe the luminescence of long wavelength than Si devices with low noise. From this, we able to see the distribution of resistibility or hetero-junction quality, and existence of leak points in plane.
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